摘要
利用X射线光电子能谱仪和X射线激发的俄歇电子谱CKLL(XAES)的一次微分析,研究了DLC膜,发现由rf等离子体沉积所制得的DLC膜具有好的热稳定性(在200～800℃退火温度下,真空加热1h后),以及DLC膜/Si、DLC膜/Ge界面处含有少量的Si-C、Ge-C键。
DLC films have been investigated using X-ray photoelectron spectroscopy and CKLL first-derivative X-ray excited Auger electron spectra(XAES). We have found that DLC films fabricated by rf-plasma deposition have good thermal sta bility at differential annealed temperature (200～800℃),and DLC/Si,DLC/Ge interfaces contain a small amount of Si-C, Ge-C, bonding.
出处
《真空科学与技术》
CSCD
1992年第6期461-465,共5页
Vacuum Science and Technology
基金
江苏省科委的资助
