摘要
引言目前常用MOS 器件的C—V 特性测量Si—SiO2界面特性,但是,无论用准静态C—V法或高频C—V 法,都难以测量由陷阱产生少数载流子的特性.为了测量陷阱的少数载流子产生率,曾发展了一些方法,但是,这些实验方法数据处理烦琐,不宜在生产中应用.在1977年以后,由J.G.Simmons 等发展了MOS
The MOS device is drived by triangular—voltage sweep which is sufficient todrive the MOS device into the non—equilibrium mode of operation.The C-Vcharacteristic is the function of sweep rate.From the C—V characteristic weanalyse simultaneously minority carrier lifetion (?)_g and surface generation velocity SThe experiment is undertaken on two groups of MOS devices made by the sameoxidation process but the aluminum gates of these two groups of samples weremade by two different methods(the hot filament evaporation and the electronbeam evaporation)in high vacuum evaporation apparatus respectively.The experi-ment shows that the surface generation velocity Sg of the sample with the gateelectrode produced by electron beam evaporation is increased.
出处
《中山大学学报（自然科学版）》
CAS
1981年第1期-,共8页
Acta Scientiarum Naturalium Universitatis Sunyatseni
