摘要
板刷擦洗是一种在化学机械抛光后清洗中常用的方法。它可以非常有效地把研磨剂颗粒从已抛光的晶圆表面去除掉。在氧化硅化学机械抛光的清洗工艺中,去离子水(或者稀释的氢氧化氨)是刷洗过程中常用的化学品起到的作用及刷洗的机械力对去除氧化硅研磨剂颗粒时所起的作用。
Brush scrubbing is widely used in post-CMP cleaning applications.It is highly effective in re-moving slurry abrasive particles from the polished wafer surfaces.In oxide CMP cleaning,DIW is com-monly used during brush scrubbing.The role of mechanic force from the brushes in removing oxide slurry particles is studied in this work.The rest of this paper focuses on the effects of chemicals used in-situ with mechanical brush scrub-bing.The chemical requirement for various post-CMP cleaning applications will be detailed in this paper.It is shown that the combined mechanical and chemical actions often give the best cleaning performance.
出处
《电子工业专用设备》
2004年第2期66-69,86,共5页
Equipment for Electronic Products Manufacturing
关键词
化学机械抛光
板刷擦洗
晶圆表面
Chemical-mechanical polishing(CMP)
Brush scrubbing
Wafer surfaces
