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薄膜集成电路行业化学有害因素的危害特征及防控效果分析

Analysis of chemical hazard characteristics and its protective effect in thin-film integrated circuit industry
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摘要 目的对薄膜集成电路行业化学有害因素的危害特征及防控措施进行调查与分析,为该行业的化学危害风险管理与控制提供依据。方法通过开展职业卫生调查、化学有害因素识别和监测等方法,对薄膜集成电路行业生产过程中产生的化学有害因素、危害程度及其防控效果进行分析和评价。结果该行业存在或产生磷化氢、氯、氨、氟化氢、一氧化碳和砷化氢等高毒物质,工作场所各岗位的化学有害因素浓度均符合职业接触限值的要求。除晶圆清洗岗位过氧化氢、炉管化学气相沉积岗位氯化氢外,其他各岗位化学有害因素的接触浓度均<职业接触限值的10%。结论该行业采取的化学有害因素防护设施与措施达到较好的控制效果,可维持现行的防控措施,但应加强化学品监测系统,新风处理、工艺设备与事故排风系统的定期维护与管理。 To analyze the characteristics of occupational hazards and protective effect in thin-film Integrated circuit industry,and provide the basis for the measures of prevention and control.Methods The occupational hazards and its degree,protective devices and its effects,were evaluated by conducting occupational health survey,identification and monitoring of chemical hazards.Results The industry produced high toxic substances such as phosphine,chlorine,ammonia,hydrogen fluoride,carbon monoxide and arsenic hydride.The concentrations of chemical hazards in the workplace met the requirements of occupational exposure limits.In addition to hydrogen peroxide in wafer cleaning and hydrogen chloride in furnace tube chemical vapor deposition,the contact concentration of chemical hazards in other posts was less than 10%of the occupational exposure limit.Conclusion The chemical protection facilities and measures adopted by the industry can achieve better control effect and maintain the existing control measures.However,regular maintenance and management of chemical monitoring systems,fresh air handling,process equipment and accident exhaust system should be strengthened.
作者 周伟 翁少凡 谢子煌 李天正 左弘 ZHOU Wei;WENG Shao-fan;XIE Zi-huang;LI Tian-zheng;ZUO Hong(Department of Occupational Hazards Evaluation,Shenzhen Prevention and Treatment Center for Occupational Diseases,Shenzhen Guangdong 518020,China)
出处 《中国卫生工程学》 CAS 2019年第2期171-174,共4页 Chinese Journal of Public Health Engineering
基金 深圳市科技计划项目(JCYJ20160429093303391)
关键词 薄膜集成电路 化学有害因素 控制效果 in-film integrated circuit Chemical hazards Control effect
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