摘要
采用原位氧等离子体刻蚀法对微波等离子体化学气相沉积金刚石薄膜进行了提高电阻率的后处理,暗电流I-V特性测试结果表明,优化的工艺可使生成膜的电阻率提高4个数量级以上;SEM和XTP分析证实刻蚀处理减少了薄膜表层的石墨和C-H含量,并且未使膜厚产生明显的改变。原位氧等离子体处理是一种简便有效的提高金刚石薄膜电阻率的工艺方法。
A insitu oxygen plasma etching method was utilized as a post treatment to settle the low resistant problem, and the results of dark currentvoltage characteristics test demonstrated that the resistivity of the film treated using a optimized procedure could be increased more than four order magnitude. SEM and XTP characterization proved the processing had decreased the content of graphite and C—H bond despite of no considerable variation in film thickness. So, this insitu oxygen plasma processing is a kind of simple effective technique for promotion of the resistivities of diamond thin films.
出处
《四川大学学报（工程科学版）》
EI
CAS
CSCD
2003年第3期58-61,共4页
Journal of Sichuan University (Engineering Science Edition)
基金
国家自然科学基金资助项目(10275046)
