摘要
金刚石膜具有优异的电学、热学性质,均匀的大面积金刚石膜是其在电子领域工业化应用的前提。利用自行设计微波等离子体化学气相沉积装置在直径51 mm和76 mm硅片上制备金刚石薄膜。用扫描电子显微镜观察所得金刚石膜的表面形貌,用ZC36高阻仪测量金刚石薄膜的电阻率。通过电阻率和形貌的均匀性判断金刚石薄膜的均匀性。结果表明,基片位置的变化引起沉积温度和含碳基团的种类、浓度与原子氢浓度的改变,从而影响了金刚石薄膜的形核和生长过程,最终影响金刚石膜的均匀性。直径51 mm金刚石薄膜表面形貌比直径76 mm的薄膜更均匀,但两种尺寸金刚石膜中间和四周的电阻率数值都接近,达到108Ω.cm,电阻率均匀性好。
Diamond possesses excellent electronic and thermal properties. Uniform diamond films with essential to their industrial applications in electronics. Using microwave plasma chemical vapor deposi large area are tion technology, diamond films were deposited on the silicon wafer of 51 - 76 mm in diameter. The surface morphology of the diamond films were observed with SEM, and the resistivity of diamond films were measured with ZC36 high resistance instrument. The uniformity of diamond films were characterized by the uniformity of surface morphology and resistivity. The results indicated that the processes of nucleation and growth of diamond film are different because the substrate temperature, the concentration of different carbonic radicals, and the concentration of atom hydrogen vary with the substrate position. So the uniformity of film is different. The film deposited on 51 mm wafer at the appropriate substrate position is more uniform than that on 76 mm wafer. But the resistivity at the center of the films is similar to that at the edge both on 51 mm wafer and 76 mm wafer, which is up to 10s Ω· cm.
出处
《四川大学学报（工程科学版）》
EI
CAS
CSCD
北大核心
2007年第2期103-106,共4页
Journal of Sichuan University (Engineering Science Edition)
基金
国家自然科学基金资助项目(10275046)
关键词
金刚石膜
微波等离子体化学气相沉积
电阻率
均匀性
large area diamond films
microwave plasma chemical vapor deposition
resistivity
uniformity
