摘要
HADS型TFT基板制程中通常存在两次ITO退火工艺,而Cell制程中则存在相似的配向膜高温烘焙工艺。为提升TFT产线退火工序的产能,因此考虑对ITO退火进行时间上的缩减甚至直接省略,然后利用配向膜烘焙的热处理对前层ITO的结晶进行补偿,但ITO结晶方式的变化还需确保产品高透过率特性。对比实验的结果表明:单层ITO退火时间由30min缩减至10min时,产品的透过率基本保持不变;2nd ITO退火直接省略时产品仍具备高的透过率特性,但1st ITO退火省略时产品的透过率则会大幅降低,其主要原因是钝化绝缘层的阻隔导致了1st ITO中的亚氧化物无法被后工段的热处理所氧化,而配向膜涂覆后的2nd ITO在烘焙过程中仍可以与外界高温空气结合反应。在确保产品高透过率的前提下,选择从源头上减少了1st ITO内亚氧化物的产生,通过增加1st ITO成膜时的氧气流量也可以实现1st ITO退火的直接省略。最终两次ITO退火均可被配向膜烘焙所替代且产品兼具高透过率特性,最大化地提升了TFT产线的生产效率。
This paper makes a research on the relationship of ITO anneal to the transmittance of HADS TFT-LCD,which based on polyimide oven to replace ITO anneal for manufacturing efficiency enhancement.The result shows that 1 st ITO and 2 nd ITO anneal process with a shorter operation time,for example,10 min makes the same level of transmittance as the normal case of 30 min.Furthermore,the 2 nd ITO anneal skip process can also maintain a high-level transmittance,because the air infiltration through polyimide can oxidate the 2 nd ITO well during the oven process.However,the1 st ITO anneal skip process leads to a significant transmittance decrease due to the dense passivation,which prevents the 1 st ITO from being oxidated by polyimide oven/2 nd ITO anneal.Based on this reason,the oxygen reactant gas during 1 st ITO sputtering is increased to produce less suboxide,which has an effect similar to the oxidation of anneal,and thus a high-level transmittance of 1 st ITO skip process is observed after polyimide oven.Therefore,1 st ITO anneal can be skipped as well as 2 nd ITO anneal,which can greatly improve the manufacturing efficiency.
作者
安晖
操彬彬
栗芳芳
叶成枝
杨增乾
彭俊林
刘增利
吕艳明
陆相晚
张敏
陈婷婷
金珍
向康
金镇满
李恒滨
AN Hui;CAO Bin-bin;LI Fang-fang;YE Cheng-zhi;YANG Zeng-qian;PENG Jun-lin;LIU Zeng-li;LYU Yan-ming;LU Xiang-wan;ZHANG Min;CHEN Ting-ting;JIN Zhen;XIANG Kang;JIN Zhen-man;LI Heng-bin(Hefei Xinsheng Optoelectronics Technology CO.,LTD.,Hefei 230001,China)
出处
《液晶与显示》
CAS
CSCD
北大核心
2019年第5期482-488,共7页
Chinese Journal of Liquid Crystals and Displays
