摘要
为满足标准P阱CMOS工艺要求 ,设计了一种新的电流求和型Bandgap电压基准电路 ,实现了相对于地的稳定电压输出 ,并且能提供多电压基准输出 .电路采用 0 6μmUMCP阱CMOS工艺验证 ,HSPICE模拟结果表明 :电路输出基准电压为 80 0mV ;在 - 40～ 85℃的温度变化范围内 ,电路温度系数仅为 1 4× 1 0 -6/℃ ;电源电压为 3 5V时 ,电路功耗低 ,消耗电流仅为 1 5 μA .该电路不需改变现有工艺 ,输出灵活 。
To meet the demand of the standard P-well CMOS process, a new type of current-summing Bandgap voltage reference has been proposed. The circuit can output a stable voltage relative to the ground and can offer multi-voltage references. The circuit has been verified with 0.6 μm UMC P-well CMOS process. HSPICE simulation results show that the output voltage is 800 mV, and that the temperature coefficient is only 14×10-6/°C in the temperature range from -40 to 85°C, and that the power is quite low since its current consumption is only 1.5 μA at supply voltage 3.5 V. Without the process variation and with flexible outputs, the circuit offers a wide application in systems with low power and multi-voltage references.
出处
《东南大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2003年第6期717-720,共4页
Journal of Southeast University：Natural Science Edition
关键词
Bandgap基准源
电流求和型
低功耗
CMOS integrated circuits
Operational amplifiers
Voltage stabilizing circuits
