摘要
本文采用高能离子注入技术将两种剂量的稀土元素钕(Nd)引入外延n-Si片中,并借助非相干光快速热退火(RTA)方法使注入层再结晶并电激活;利用深能级瞬态谱(DLTS)测量方法对Si中Nd离子的深能级行为进行了研究。结果发现:经几秒钟的BTA处理,Nd能在Si中被激活并形成深能级中心,测量到较宽的DLTS谱峰。Nd在n-Si中的深能级行为与Si衬底材料的浅能级杂质基本无关。在低于1285℃的RTA时,Nd形成的深能级中心均为施主型。深能级中心的位置随注入剂量和退火温度不同而有所变化;高温退火后,Nd在硅中有一个能级位置为E_c-(0.32±0.04)eV稳定的施主型深中心,对它的成因进行了讨论。
The different dose of rare earth Nd ion was implanted into n-type silicon, and the samples were annealed by using rapid thermal annealing method. It was investigated that the thermal annealing behavior of rare earth Nd ion in the n-type silicon by deep level transient spectroscopy (DLTS). The results indicate that the deep levels formed by Nd ion in silicon depend on the dose and annealing temperature. When the annealing temperature is lower than 1285℃, the deep level is changed with the dose of Nd and the annealing temperature. After high temperature annealing, only one donor-like deep level at Ec-(0.32 ± 0.04)eV can be observed stably, which is similar to the level of Nd with large dose annealed at lower temperature. This deep level may be ascribed to the rare earth oxided formed in RTA process.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2003年第5期483-487,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金委员会重大研究计划重点(90201038)
