期刊文献+

基于Ge衬底的高带隙AlGaInP太阳电池研究

STUDY ON HIGH-BANDGAP OF AlGaInP SOLAR CELLS ON Ge SUBSTRATE
下载PDF
导出
摘要 以高带隙的AlGaInP材料为研究对象,基于AlGaInP/Ge双结电池结构,通过改变AlGaInP子电池的Al组分、基区厚度、窗口层厚度等参数来改善电池的电性能。研究结果表明:随着Al组分从10%降至6%,AlGaInP子电池的材料带隙从2.05 eV降至2.00 eV,外量子效率(EQE)响应的范围及强度均有明显提高,在AM1.5G光谱条件下电池效率从10.01%升至14.86%,并发现通过基区加厚可提高中长波段的EQE响应,而通过窗口层减薄则有利于提高短波EQE响应,最终双结电池在AM1.5G光谱条件下效率达到17.16%。 Optimizing the aluminum content,base thickness and window thickness of AlGaInP sub-cell,the efficiency of AlGaInP/Ge double-junction(DJ)solar cell is obviously improved.We find that the samples with lower aluminum content exhibited a clear improvement in the all-wavelength external quantum efficiency(EQE)of the AlGaInP sub-cell.And by increasing the base thickness,a clear improvement was achieved in the long-wavelength EQE of the AlGaInP sub-cell.Finally,we reduce the thickness of the window layer and get an improvement in the short-wavelength EQE of the AlGaInP sub-cell.Under the spectrum at 1000 W/m^2(AM1.5 G),the best of these AlGaInP/Ge DJ solar cells had an efficiency of 17.16%.
作者 姜德鹏 黄珊珊 马涤非 彭娜 张小宾 Jiang Depeng;Huang Shanshan;Ma Difei;Peng Na;Zhang Xiaobin(Shanghai Institute of Space Power-Sources,Shanghai 200245,China;Uniwatt Technology Co.,Ltd.,Zhongshan 528437,China)
出处 《太阳能学报》 EI CAS CSCD 北大核心 2019年第9期2616-2621,共6页 Acta Energiae Solaris Sinica
关键词 Ⅲ-V族半导体 宽带隙 金属有机化合物气相外延 量子效率 Ⅲ-V semiconductors broadband MOCVD quantum efficiency
  • 相关文献

参考文献2

二级参考文献18

  • 1Law D C, King R R, Yoon H, et al. Future technology pathways of terrestrial III-V multijunction solar cells for concentrator photo-voltaic systems [J]. Solar Energy Materials & Solar Cells, 2010, 94(8) : 1314-1318. 被引量:1
  • 2Debney B T, Knight J R. Terrestrial solar cells - Present and future [ J ]. Contemporary Physics, 1978, 19 (1): 25-45. 被引量:1
  • 3Sehone J, Dimroth F, Bett A W, et al. III-V solar cellgrowth on wafer-bonded GaAs/Si-substrates [A]. Conference Record of the 2006 IEEE 4th World Conference on Photovohaic Energy Conversion[C], Waikoloa, HI, 2006, 1: 776-779. 被引量:1
  • 4Zahler J M, Tanabe K, Ladous C, et al. High efficiency InGaAs solar ceils on Si by InP layer transfer[J]. Applied Physics Letters, 2007, 91 (1) : 012108- 1- 012108-3. 被引量:1
  • 5Tanabe K, Morral A F, Atwater H A, et al. Direct- bonded GaAs/InGaAs tandem solar cell[J]. Applied Physics Letters, 2006, 89(10) : 102106-1-102106-3. 被引量:1
  • 6TAKAMOTO T, KODAMA T, YAMAGUCHI H, et al. Paper-thin InGaP/GaAs solar cells[J]. IEEE,2006, 2: 1769-1772. 被引量:1
  • 7TAKAMOTO T, KANEIWA M, IMAIZUMI M, et al. InGaP/GaAs- based multijunction solar cells[J]. Progr Photovolt Res Appl, 2005, 13(6): 495-511. 被引量:1
  • 8TSENG M C, HORNG R H, TSAI Y L, et al.Fabrication and charac- terization of GaAs solar cells on copper substrates[J]. IEEE Electron Device Lett, 2009, 30(9):940-942. 被引量:1
  • 9SCHERMER J J, BAUHUIS G J, MULDER W J, et al. High rate epitaxial lift-off of InGaP films from GaAs substrates[J]. Appl Phys Lett, 2000, 76(15):2131-2133. 被引量:1
  • 10SMEENK N J, ENGEL J, MULDER P, et al. Arsenic formation on GaAs during etching in HF solutions: relevance for the epitaxial lift-off process [J]. ECS Journal of Solid State Science and Techno- logy, 2013, 2(3): 58-65. 被引量:1

共引文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部