摘要
在极低温环境中,为实现对晶体管的噪声参数提取,该文采用嵌入网络和去嵌入式技术。在测试的过程中,将多工器嵌入到测试网络中,实现有源器件所需要的不同频率电源;同时,将多工器与直通校准件相连,利用噪声系数与增益之间的关系,分别求出嵌入网路中的S参数,后用Matlab编程计算。由此求出HEMT晶体管的噪声系数(NF),从而实现在极低温环境下的晶体管的噪声参数提取,为极低温下的微波电路设计提供有力的技术方案。
In order to extract the noise parameters of HEMT transistors at extremely low temperature, an embedding network and de-embedding technology has been adopted. A multiplexer was embedded into a test network to provide active devices with different frequencies of power during the test. At the same time, the multiplexer was connected with a through calibration module to obtain multiple S parameters in the embedded network based on the relationship between noise figures and transmission gains. And HEMT transistor noise figures(NF)were calculated via MATLAB programming, achieving the extraction of noise parameters at low temperatures and offering a powerful technical solution for microwave circuit design at low temperatures.
出处
《中国测试》
CAS
北大核心
2015年第5期26-29,共4页
China Measurement & Test
