摘要
研究了掺氮直拉硅单晶 (NCZ)中氮在高温退火过程中对氧沉淀的影响 .通过不同温度高温退火后 ,测量氧沉淀的生成量和观察硅片体内微缺陷 (BMD)密度与高温形核时间的变化关系 ,同时用透射电子显微镜 (TEM)观察氧沉淀及相关缺陷的微观结构 .实验结果表明高温退火后氮对硅中氧沉淀形核有明显的促进作用 ,在相同退火条件下NCZ硅中BMD密度要远远高于相应的普通直拉硅 .这是由于氮在高温下与氧反应形成氮氧复合体 (N V O)促进了氧沉淀的形核 ,而且TEM的结果表明氧沉淀的形态都是平板状 ,周围存在应力场 .
The effect of nitrogen on the oxygen precipitation during high-temperature annealing in Czoehralski silicon was investigated. After annealing under different conditions, the variation of oxygen precipitation and the bulk microdefects (BMDs) density with annealing time at high temperatures was measured, and transmission electronic microscope was used to observe the microstructure of oxygen precipitates. It was found that nitrogen doping strongly enhanced oxygen precipitation during high-temperature annealing; furthermore, the densities of BMDs in the annealed NCZ samples were higher than those in the corresponding CZ ones. Therefore, it is considered that the nitrogen can react with vacancy and oxygen to form N-V-O complexes to enhance the nucleation of oxygen precipitates, and the oxygen precipitates are plates with strong inner stress.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第8期2000-2004,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :5 0 0 3 2 0 10
60 2 2 5 0 10 )资助的课题~~
