摘要
通过添加适量CuO和Bi2O3,将Ni-Zn铁氧体材料的烧结温度降至870～920℃,达到Ni-Zn铁氧体材料与Ag电极共烧匹配的目的.试制了片式抗电磁干扰滤波器,并对其插入损耗特性进行了计算机模拟,表明所研制的抗电磁干扰滤波器不仅适合高密度表面封装技术的要求,也可满足宽频域抗电磁干扰需要.
By adding CuO and Bi2O3 to Ni-Zn ferrites, the sintering temperature is decreased to a range of 870 to 920℃, which makes it possible the co-sintering of Ni-Zn ferrites and Ag electrode. As a result, chip anti-EMI filters were prepared that are suitable for high density surface mounted technology and broad frequency anti-electromagnetic interference applications.
出处
《磁性材料及器件》
CAS
CSCD
2003年第4期7-9,共3页
Journal of Magnetic Materials and Devices
