摘要
采用RF平面磁控溅射技术在单晶Al2O3衬底上淀积了ZnO薄膜.研究了ZnO薄膜的结构特性及电学性能,XRD结果表明:在Al2O3衬底上沉积的ZnO薄膜是高度c轴取向的.电阻率测试结果表明:在纯氧中高温退火,薄膜的电阻率提高到107Ω·cm量级.对于ZnO Al2O3结构的SAW器件,随着ZnO薄膜厚度的减小,其机电耦合系数降低,但声表面波速率增加.
Zinc oxide (ZnO) thin films were deposited on Al2O3 by R. F. plane magneticcontrol sputtering system. Structure and electrical properties of ZnO films were investigated. XRD results show that ZnO films deposited on Al2O3 had a very strong preferred orientation along caxis normal to the substrate surface. The resistivity of ZnO films annealed in pure O2 at high temperature were increased to the magnitude order of 107Ω·cm. For ZnO / Al2O3 surface acoustic wave (SAW) devices, when the thickness of ZnO thin films decreased, the mechanicalelectrical coupling coefficient decreased and the surface wave velocity increased.
出处
《湖北大学学报（自然科学版）》
CAS
2003年第2期130-132,共3页
Journal of Hubei University：Natural Science
基金
武汉市科技晨光计划资助项目(20015005032)
