摘要
采用RF平面磁控溅射技术在单晶Si(100)衬底上淀积了ZnO薄膜。对退火前后ZnO薄膜的结构特性、化学组份以及缺陷特性进行了详细的研究。结果表明:在纯氧中高温退火(600℃)是改善ZnO压电薄膜的结构特性、化学组份并减少缺陷的良好方法。
Zinc oxide (ZnO) thin films were deposited on Si( 100) byR.F. plane magnetic - control sputtering system.Structure of ZnO films,chemical compositions of Zn and 0 in the films,and the defect properties were investigated in detail for both the pre - annealed and annealed samples. It was proved that annealing in pure 02 at a high temperature is a practical way to improve the structure of the films and chemical compositions of Zn and 0 in the films, and decrease the defect density as well.
出处
《湖北大学学报（自然科学版）》
CAS
2002年第3期232-234,共3页
Journal of Hubei University：Natural Science
基金
武汉市晨光计划(20015005032)项目
