摘要
在深亚微米 MOS集成电路制造中 ,等离子体工艺已经成为主流工艺。而等离子体工艺引起的栅氧化层损伤也已经成为限制 MOS器件成品率和长期可靠性的一个重要因素。文中主要讨论了等离子体工艺引起的充电损伤、边缘损伤和表面不平坦引起的电子遮蔽效应的主要机理 ,并在此基础上讨论了减小等离子体损伤的有效方法。
Plasma processes have been the main processes in the manufacture of deep sub-micron MOS IC. So the plasma process-induced gate oxide damage has been one of the important limitations of yield and long-term reliability of MOS device. The mechanism of charging damage, edge damage and electron shading effect in the mass have been studied and finally several methods for reducing plasma damage are given
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第1期126-132,共7页
Research & Progress of SSE
基金
重点预先研究项目支持研究 (项目编号 :8.5 .3 .4)
