摘要
双栅 MOSFET是一种非常有发展前途的新型器件 ,它具有跨导高、亚阈值特性优异、短沟道特性好等优点。但是目前自对准的双栅 MOSFET的工艺制作相当困难。本文中分析了双栅 MOSFET的正、背面栅存在对准误差时 ,对器件的静态及动态特性的影响 。
Double gate MOSFET is considered the most promising candidate for CMOS scaled to the ultimate limit of 20～30 nm gate length, which offers a superior subthreshold slope, better shortchannel control, and higher mobility. But the fabrication of self aligned double gate MOSFET is too complicated. In this paper, we analyze the static and dynamic characteristics of double gate MOSFET with misaligned gates, and present a method to reduce the influence.
出处
《电子器件》
CAS
2002年第4期402-405,共4页
Chinese Journal of Electron Devices
基金
模拟集成电路国家级重点实验室资助项目
