摘要
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.
基金
National Key R&D Program of China(2017YFB0403000)
National Natural Science Foundation of China(NSFC)(61774081,91850112)
Natural Science Foundation of Jiangsu Province(BK20161401)
Fundamental Research Funds for the Central Universities(021014380085,021014380093,021014380098)
Priority Academic Program Development of Jiangsu Higher Education Institutions
Science and Technology Project of State Grid Corporation of China(SGSDDK00KJJS1600071)
