摘要
在普通金刚石中掺入某些杂质元素可以使其具有更为优异的物理和机械性能。掺入硼元素可以使普通金刚石具有p型半导体特性。目前,对于p型半导体金刚石膜材料研究较多,而对于高温高压下合成的p型半导体金刚石单晶体材料研究相对较少。本文介绍了p型含硼半导体金刚石膜材料及高温高压下合成掺硼金刚石单晶体材料的研究现状。由此指出具备p型半导体特性的Ⅱb型金刚石大单晶是适合硼重掺杂的首选材料。重掺硼的Ⅱb型金刚石大单晶具备大尺寸及优良的半导体特性必将大大拓宽p型半导体金刚石的应用范围。
The ordinary diamond doped some impurity elements can be obtained more excellent characteristics of physical and mechanical performance than the common diamond. Diamond doped additive boron is diamond with characteristic of p-type semiconductor. At present,the study of p type semiconductor diamond films is more mature than that of p-type semiconductor diamond bulk materials.Research status of p type semiconductor diamond in film and bulk materials were summarized in this paper. Therefore,TypeⅡb large diamond with characteristic of p-type semiconductor is adopt for boron heavily doped as firstly material. The application range of p type semiconductor diamond will be broaden by typeⅡb high-quality large diamond with boron heavily doped.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2015年第S1期243-247,共5页
Bulletin of the Chinese Ceramic Society
基金
河南省教育厅重点资助(12A430010)
焦作市应用基础研究项目(212)
河南理工大学创新型科研团队支持计划资助(T2013-4)
关键词
掺硼
P型半导体
金刚石
boron doped
p type semiconductor
diamond
