摘要
用微波等离子体CVD方法制作了掺硼金刚石薄膜热敏电阻器．该器件的结构由Si3N4基底和2μm厚的掺硼金刚石薄膜组成，并采用了经退火处理的钛／金双金属层制作欧姆接触．结果在室到600℃范围内获得了欧姆接触、温度响应以及电阻温度系数优良的热敏电阻器．
Thermistors have been fabricated from B-doped polycrystalline films by microwave plasma CVD method. The device structure consisted of 2μm thick of boron doped diamond films on a Si3N4 substrate.Ohmic contacts were established with an annealed titanium/gold bilayer structure. As a result, the thermistors with good ohmic contact,liner temperature response and high TCR (temperature coefficient of resistance) from room temperature to 600℃ have been obtained.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第5期122-124,共3页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
掺硼
金刚石薄膜
热敏电阻器
欧姆接触
B-doped diamond films, Si_3N_4 substrate, Characteristics of thermistor, Ohmic contact, Temperature response
