摘要
辐照诱发电荷耦合器件(CCD)图像传感器性能退化与CCD片上放大器中的金属氧化物半导体(MOS)管性能退化密切相关。本文以国产CCD片上放大器中的MOS管为研究对象,开展了3种不同注量的质子辐照实验,测试了辐照前后性能参数的退化规律。采用SENTAURUS TCAD软件建立了CCD片上放大器中MOS管的工艺模型,在SiO2层引入固定正电荷,在Si/SiO2界面处引入界面态进行了辐射效应仿真模拟,仿真结果与辐照实验测试结果吻合较好。结合辐照实验和仿真模拟结果,对CCD片上放大器中MOS管的质子辐照损伤效应进行了深入分析,结果表明:阈值电压与饱和输出电流等辐照特性参数的变化主要由辐射感生氧化层陷阱电荷和界面态导致,辐照感生陷阱电荷量与质子辐照注量大小相关,辐照注量越大特性参数变化越大。最后开展了室温退火测试,测试结果表明:随着退火时间的延长,阈值电压与饱和电流出现一定程度的恢复。
The irradiation-induced performance degradation of CCD(charge coupled device)image sensors is closely related to the performance degradation of MOS(metal oxide semiconductor)transistors in CCD on-chip amplifiers.The damage mechanism and annealing effect of proton irradiation-induced performance degradation of MOS transistors in CCD on-chip amplifiers were investigated to provide theoretical and experimental support for the study of proton radiation damage effect and annealing effect in CCD image sensors.Taking the MOS transistors in domestic CCD on-chip amplifiers as the research object,proton irradiation experiments with three different fluences were carried out,and the degradation of the performance parameters before and after irradiation was tested.In order to simulate the real situation of MOS transistors in CCD on-chip amplifiers before and after irradiation,the process model of MOS transistors in CCD on-chip amplifiers was established by SENTAURUS TCAD software according to the actual process parameters of the devices,and the simulation model was calibrated and verified according to the actual test data before and after irradiation experiments,and relevant physical models were introduced.Fixed positive charges were introduced into the SiO2 layer and interface states were introduced at the Si/SiO2 interface to simulate the radiation damage effect,and the irradiation simulation results are in good agreement with the irradiation experimental test results.Combined with the irradiation experimental data and simulation results,the proton irradiation damage effect of the MOS transistors in the CCD on-chip amplifier was analyzed in depth,and the results show that the changes of irradiation parameters such as threshold voltage and saturation output current are mainly caused by the radiation induced oxide trap charge and interface state,and the amount of trap charges induced by radiation is correlated to the size of proton irradiation fluence,and the irradiated device threshold voltage increases,saturation output cur
作者
晏石兴
王祖军
唐宁
吕玉冰
王小东
李传洲
蒋镕羽
YAN Shixing;WANG Zujun;TANG Ning;LYU Yubing;WANG Xiaodong;LI Chuanzhou;JIANG Rongyu(School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;National Key Laboratory of Intense Pulsed Irradiation Simulation and Effect,Northwest Institute of Nuclear Technology,Xi’an 710024,China;Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2024年第11期2412-2418,共7页
Atomic Energy Science and Technology
基金
国家自然科学基金(U2167208,11875223)
陕西省自然科学基础研究计划(2024JC-JCQN-10)
全国重点实验室基金(NKLI-PR1803,NKLIPR2012,NKLIPR2113)。
关键词
CCD
质子辐照
辐照注量
辐照损伤
退火测试
CCD
proton irradiation
irradiation fluence
radiation damage
annealing test
