摘要
绝缘栅双极型晶体管(Insulated gate bipolar transistor,IGBT)是中大功率电力电子变流器的核心器件。为提高IGBT状态监测的安全性与经济性,研究了一种基于高频开关振荡的三相两电平变流器非接触式状态监测技术。采用专用传感器首先通过非接触方式在线测量变流器PWM开关电压自激产生的高频振荡电流,然后利用三相高频振荡与基波电流的极性关系在无门极信号的条件下实现了变流器中所有IGBT开关事件定位,最后根据振荡信号中开关暂态拐点特征检测出IGBT关断时间。基于以上技术原理,采用嵌入式平台研发了一套变流器IGBT非接触式状态监测装置并在380 V/3 kW变频电机对拖平台上开展了技术验证工作。试验结果表明,该装置能对变频器逆变器中6个IGBT的开关特性及其健康状态实施在线监测,具有安全、准确以及经济等优点。
Insulated gate bipolar transistor(IGBT)is the core device of medium-to-high power electronic power converters.In order to enhance the safety and cost-effectiveness of IGBT condition monitoring,a non-contact condition monitoring technique for three-phase two-level converters based on high-frequency switch oscillations is proposed.This technique utilizes dedicated sensors to first measure the high-frequency oscillation current generated by the PWM switch voltage of the converter in a non-contact manner.Then,it achieves the localization of all IGBT switch events in the converter under the condition of no gate signals by the polarity relationship between the three-phase high-frequency oscillation and the fundamental current.Finally,the IGBT turn-off time is detected based on the characteristic detection of transient inflection points in the oscillation signal.Based on the above technical principles,a non-contact IGBT condition monitoring device is built for converters on an embedded platform and carries out technical verification on a 380 V/3 kW variable frequency motor towing platform.The experimental results show that the device can implement online monitoring of the switching characteristics and health condition of the six IGBTs in the inverter of the frequency converter,with advantages such as safety,accuracy,and cost-effectiveness.
作者
曹阅洋
向大为
李豪
CAO Yueyang;XIANG Dawei;LI Hao(College of Electronic and Information Engineering,Tongji University,Shanghai 201804;College of Electrical Power Engineering,Shanghai University of Electric Power,Shanghai 200090)
出处
《电气工程学报》
CSCD
北大核心
2024年第3期23-30,共8页
Journal of Electrical Engineering
基金
国家自然科学基金(52177190)
上海市自然科学基金(22ZR1425400)资助项目。
关键词
状态监测
IGBT
非接触式
嵌入式装置
Condition monitoring
insulated gate bipolar transistor(IGBT)
non-contact
embedded device
