摘要
针对绝缘栅双极晶体管(IGBT)应用选型中长期以来采用经验的粗放式设计方法,本文基于IGBT结构和PN结雪崩击穿原理,分析了场终止型IGBT雪崩击穿电压的计算公式和测量方法。由于线路和器件内部分布电感的存在,开关时会产生一个电压尖峰,分析了IGBT过电压击穿特性和电压尖峰的抑制方法。针对通常认为一旦发生过电压击穿就会损坏器件的错误认识,分析了IGBT过电压击穿失效机理和失效模式,发现过电压击穿失效本质是由于热量累积引起结温上升的热击穿失效,失效模式初始表现为短路最终表现为开路,最后实验验证了IGBT具有可承受短时过电压击穿的能力。
Aiming at long-term extensive design method during selecting IGBT model,calculation and measurement of field stop IGBT avalanche breakdown voltage is analyzed based on structure of IGBT and avalanche breakdown theory of PN junction.As distributing induction of circuit and device brought a peak voltage during switching transient,characteristic in over-voltage breakdown and methods of controlling peak voltage is also analyzed.Aiming at the mistaken cognition that IGBT could be failure once over voltage happened,failure mechanism and mode of over-voltage breakdown is analyzed.The essence in over-voltage breakdown failure is thermal failure induced by cumulate heat inducing junction temperature rise.Failure mode behaves short circuit firstly and open circuit lastly.The ability of enduring short time over-voltage breakdown of IGBT is validated by experiment.
出处
《电工技术学报》
EI
CSCD
北大核心
2011年第8期145-150,共6页
Transactions of China Electrotechnical Society
基金
国家自然科学基金(50737004)和国家自然科学基金委员会创新研究群体科学基金(50721063)资助项目
关键词
IGBT
雪崩击穿
失效机理
失效模式
短时过电压
IGBT
avalanche breakdown
failure mechanism
failure mode
shorten-time over-voltage
