摘要
绝缘栅双极晶体管(IGBT)是一种性能优良的全控型电力电子器件,由于线路和器件内部分布电感的存在,关断时集电极电流的快速变化会感应产生一个较大的电压尖峰从而引起过电压击穿。分析了栅极结电容放电时间常数和拖尾电流对电压尖峰的影响,通过改变栅极驱动电阻和温度可以抑制电压尖峰。分析了电压尖峰引起过压击穿的失效机理以及失效模式,表明IGBT过压击穿引起失效的本质仍然是结温过高引起的热击穿失效。
The insulated gate bipolar transistor（IGBT）is a preferred switching power electronics device.As distributing parameters of circuit and device present induction,collector current rapid drop in turn-off transient can induce a high voltage spike to bring over-voltage breakdown.The influence of gate junction capacitance discharge time constant and current tail on voltage spike was analyzed.The voltage spike was controlled by changing gate resistance and junction temperature.Failure mechanism and mode of over-voltage breakdown aroused by voltage spike were also analyzed.The conclusion shows that failure mechanism of over-voltage breakdown for IGBT is essentially thermal breakdown failure aroused by junction temperature.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第7期501-504,共4页
Semiconductor Technology
基金
国家自然科学基金重点项目(50737004)
关键词
绝缘栅双极晶体管
关断瞬态
电压尖峰
栅极电阻
失效机理
insulated gate bipolar transistor（IGBT）
turn-off transient
voltage spike
gate resistance
failure mechanism
