摘要
单晶硅是光伏及半导体行业研究的热点材料,主要用于制作半导体元器件。根据我国单晶硅产品中杂质元素的分类及含量要求,综述了各类杂质元素含量的测定方法,主要有二次离子质谱法(SIMS)、傅里叶红外光谱法(FT-IR)、辉光放电质谱法(GDMS)、X荧光光谱法(XRF)、电感耦合等离子体质谱法(ICP-MS)、中子活化(NAA)等。分析了各方法的适用范围、应用现状及优缺点。由于固体标准物质和标准样品的缺乏,限制了FT-IR及GDMS等方法的应用和发展。随着材料研发技术的进步,痕量元素分析用固体标准物质和标准样品的成功研制将助力分析检测技术的完善,能更好地满足我国单晶硅及其他材料的分析检测需求。
Monocrystalline silicon is a hot material in the photovoltaic and semiconductor industries,which is mainly used for the production of semiconductor components.Based on the classification and content requirements of impurity elements in monocrystalline silicon products of China,the determination methods for various impurity element content were summarized.These methods mainly included secondary ion mass spectrometry(SIMS),Fourier transform infrared spectroscopy(FT-IR),glow discharge mass spectrometry(GDMS),X-ray fluorescence spectroscopy(XRF),inductively coupled plasma mass spectrometry(ICP-MS),neutron activation(NAA),et al.The application scope,current application status,advantages,and disadvantages were analyzed.The lack of solid reference materials limits the application and development of methods such as FT-IR and GDMS.With the advancement of material research and development technology,the successful preparation of solid reference materials for trace element analysis will help improve the analysis technology.This will meet the testing requirements of monocrystalline silicon and other materials better more.
作者
胡芳菲
刘丽媛
刘红
刘智鹏
赵景鑫
杨复光
HU Fang-fei;LIU Li-yuan;LIU Hong;LIU Zhi-peng;ZHAO Jing-xin;YANG Fu-guang(China Guobiao(Beijing)Testing&Certification Co.,Ltd.,Beijing 101407,China)
出处
《化学试剂》
CAS
2024年第11期10-16,共7页
Chemical Reagents
基金
国家重点研发计划项目(2021YFF0700104)。
关键词
单晶硅
产品
杂质元素
分析测试
进展
monocrystalline silicon
product
impurity elements
analysis and testing
progress
