摘要
Aqueous Zn-iodine(Zn-I_(2))batteries have attracted extensive research interest as an emerging redox conversion energy storage system due to the low cost and high safety.However,the shuttling effects of polyiodides arising from incomplete redox conversion and inhomogeneous Zn plating on the Zn anode surface always hinder the commercial application of Zn-I_(2)batteries.In this work,a two-birds-with-one-stone strategy is reported for long-life Zn-I_(2)batteries.Based on the strategy,the sulfonate-functionalized carbon fiber not only acts as the excellent iodine limiter to inhibit iodine species shuttling,but also as the uniform Zn plating guidance layer on the Zn anode surface to prevent the inhomogeneous deposition of Zn^(2+).Consequently,a superior cycling stability(a capacity of 124 mAh g^(-1)after 10,000 cycles at 5 A g^(-1))is achieved.Theoretical calculations illustrate that sulfonate groups successfully induce charge redistribution on the carbon substrate,thereby strengthening the electronic interactions of the iodine species with the carbon substrate.The charge-enriched sulfonate groups can guide the uniform deposition of Zn^(2+)through a strong Coulombic effect with Zn^(2+).This work gives a new perspective on the integrated design of cathodes and anodes for rechargeable batteries.
锌碘水电池(Zn-I_(2))作为一种新兴的氧化还原转化储能系统以其低成本和高安全性引起了广泛的研究兴趣.然而,氧化还原转化不完全导致的多碘化物穿梭效应,以及锌阳极表面锌镀层的不均匀性,始终阻碍着锌碘电池的商业应用.本文报道了一种针对长寿命Zn-I_(2)电池的“一石二鸟”策略.根据这一策略,磺酸功能化碳纤维不仅可以作为出色的碘限制器抑制碘物种的穿梭,还可以作为锌阳极表面的均匀镀锌引导层防止Zn^(2+)的不均匀沉积.因此,这种电池具有出色的循环稳定性(在5 A g^(-1)条件下循环10,000次后,容量为124 mAh g^(-1)).理论计算表明,磺酸基团成功地诱导了碳基底上的电荷再分布,从而加强了碘物种与碳基底的电子相互作用.电荷富集的磺酸基团可通过与Zn^(2+)的强烈库仑效应引导Zn^(2+)均匀沉积.这项研究为可充电电池阴极和阳极的一体化设计提供了新的视角.
作者
Wentao Qu
Chenyu Wen
Baohui Chen
Yong Cai
Ming Zhang
屈文涛;温晨玉;陈宝辉;蔡勇;张明(Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics&Devices,School of Physics and Electronics,Hunan University,Changsha,410082,China;Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha,410082,China;College of Materials Science and Engineering,Hunan University,Changsha,410082,China;Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha,410082,China;State Key Laboratory of Disaster Prevention&Reduction for Power Grid(Hunan Electric Power Corporation Disaster Prevention and Reduction Center),Changsha,410007,China)
基金
supported by the National Natural Science Foundation of China(51772082 and 51804106)
the Natural Science Foundation of Hunan Province(2023JJ10005)
the Science and Technology Projects of the State Grid Corporation of China(5500-202323102A-11-ZN)。
