摘要
激光直写光刻因其高速、低成本、无需掩模辅助以及能实现大面积的微纳结构制造的优点,在光学元件制造、光学成像、微机电系统等领域中具有广阔的应用前景。然而,受到光学衍射极限的限制,激光直写光刻的分辨率难以达到nm量级。相变薄膜具有制备工艺简单、热阈值效应明显、相变前后显影选择性好等特点,能为实现高分辨激光直写光刻提供新的解决方案。首先,介绍了基于相变薄膜的高分辨激光直写光刻原理。其次,综述了近年来用于高分辨激光直写光刻的SbTe基、GeSbTe基和其他类型相变薄膜的光刻特性、刻蚀选择性以及相关机理。然后,进一步综述了相变薄膜的高分辨激光直写光刻在相变存储、光学传感、光学器件制造及灰度/彩色打印等领域中的应用潜力。最后,对相变薄膜在高分辨激光直写光刻方面的应用前景进行了总结与展望。
Significance Nanolithography is widely applied in the manufacturing of microelectronics and optoelectronic devices.Because of its high mask cost,nanolithography based on mask exposure is more suitable for large-scale integrated circuit manufacturing.To satisfy the requirements of low-cost and high-resolution device fabrication,developing high-resolution maskless lithography is necessary.Maskless lithography includes electron/focused ion beam direct writing,scanning probe lithography,and direct laser writing,which provides flexible technical means for personalized device manufacturing.Due to its high speed,low cost,and lack of mask assistance,direct laser writing can fabricate large-area micro/nanostructures and has potential applications in fields such as optical imaging and microelectromechanical systems.However,due to the optical diffraction limit,obtaining resolutions that reach the nanoscale level for direct laser writing is difficult.In general,methods to improve resolution include shortening the laser wavelength and enlarging the numerical aperture of the lens.However,a constant reduction in laser wavelength and an increase in the numerical aperture increase both the costs of equipment and process.Researchers have proposed various methods for achieving low-cost and high-resolution direct laser writing.Among others,phase-change thin films may provide a new solution because of their obvious thermal threshold effect,wide range of spectral responses,and simple preparation process.The past few decades have witnessed great advances in high-resolution direct laser writing of phase-change thin films.However,challenges remain in terms of lithography performance improvement and process stability.Therefore,reviewing the existing research to guide future developments in this field more rationally is necessary.Progress The principle of high-resolution direct laser writing lithography based on phase-change thin films is introduced(Fig.1),and the corresponding lithographic characteristics are summarized,including lower li
作者
郭嘉龙
魏涛
魏劲松
胡敬
程淼
刘倩倩
王瑞瑞
李宛飞
刘波
Guo Jialong;Wei Tao;Wei Jingsong;Hu Jing;Cheng Miao;Liu Qianqian;Wang Ruirui;Li Wanfei;Liu Bo(Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices,School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,Jiangsu,China;Laboratory of Micro-Nano Optoelectronic Materials and Devices,Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences,Shanghai 201800,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2024年第12期329-348,共20页
Chinese Journal of Lasers
基金
国家自然科学基金(62205231,52303130)。
关键词
光刻
高分辨
激光直写
相变薄膜
热阈值
应用
lithography
high-resolution
direct laser writing
phase change thin film
thermal threshold
application
