摘要
An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF_(3)/O_(2)mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeS_(b)Te resist is as high as 19 at SF_(6)/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.
作者
Xingwang Chen
Lei Chen
Ying Wang
Tao Wei
jing Hu
Miao Cheng
Qianqian Liu
Wanfei Li
Yun Ling
Bo Liu
陈兴旺;陈雷;王莹;魏涛;胡敬;程淼;刘倩倩;李宛飞;凌云;刘波(Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices,School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;School of Electronic&Information Engineering,Suzhou University of Science and Technology,Suzhou 215009,China)
基金
The work was supported by the National Natural Science Foundation of China(Nos.21773291,61904118,and 22002102)
Natural Science Foundation of Jiangsu Province(Nos.BK20190935 and BK20190947)
Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.19KJA210005)
Jiangsu Key Laboratory for Environment Functional Materials.
