摘要
Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.
基金
financially supported by National Natural Science Foundation of China (No. 62274181,62204257 and 62374016)
Chinese Ministry of Science and Technology (No. 2019YFB2205005)
Guangdong Province Research and Development Program in Key Fields (No. 2021B0101280002)
the support from Youth Innovation Promotion Association Chinese Academy of Sciences (No. 2021115)
Beijing Institute of Electronics
Beijing Association for Science and Technology as well,the support from University of Chinese Academy of Sciences (No. 118900M032)
China Fundamental Research Funds for the Central Universities (No. E2ET3801)
