期刊文献+

纳米银无压封装互连技术

Nano-silver pressureless package interconnect technology
下载PDF
导出
摘要 纳米银无压烧结技术作为一种新型封装互连技术,凭借烧结银层的优异性能,逐步在第三代半导体器件的封装互连领域应用和推广。目前,无压烧结银技术只适用于芯片级别小面积互连领域,在基板级别大面积互连领域存在若干瓶颈,有待深入研究。文章详细介绍了现有的小面积无压烧结纳米银互连工艺以及可靠性,在此基础上,针对大面积无压烧结银工艺所面临的瓶颈,引入一种双层印刷焊膏(双印法)的低温无压烧结工艺。采用超声扫描成像技术对烧结质量进行表征,获得双印法中使用的两层银焊膏的成分优化配比并对其烧结机理进行分析,为纳米银基板级大面积无压烧结互连提供一种可行方案。最后,展望了基板级别大面积无压烧结银工艺的发展趋势和应用前景。 As a state-of-the-art interconnect technology the nano-silver pressureless sintering technology is gradually being applied and promoted in packaging for third generation semiconductor devices due to the excellent performance of sintered-silver bond-line.At present,chip-level small-area bonding can be easily achieved by employing pressureless sintered-silver technology.There are several bottlenecks that still need to be dealt with to achieve substrate-level large-area bonding plates by pressureless sintering of nano-silver.In this paper,the existing small-area nano-silver pressureless sintering technology and the reliability of pressureless sintered-silver bond-line are detailed.On this basis,a large-area pressureless sintering process with a double-layer silver paste printing(double-printing)method is introduced to deal with the existing bottlenecks.The bonding quality is characterized by scanning acoustic microscope.The solid loading of silver paste is optimized to obtain better bonding quality,and the sintering mechanism is analyzed in detail.The introduced nano-silver sintering process provides a feasible scheme for substrate-level large-area pressureless bonding plates.Finally,the development trends and application prospects of substrate-level nano-silver pressureless sintering process are foreseen.
作者 吴成金 谭沿松 高丽兰 WU Chengjin;TAN Yansong;GAO Lilan(Tianjin Key Laboratory for Advanced Mechatronic System Design and Intelligent Control,Tianjin University of Technology,Tianjin 300384,China;National Demonstration Center for Experimental Mechanical and Electrical Engineering Education,Tianjin University of Technology,Tianjin 300384,China;CARE Measurement&Control System(Tianjin)Company,Tianjin 300000,China)
出处 《天津理工大学学报》 2024年第2期41-48,共8页 Journal of Tianjin University of Technology
基金 国家自然青年科学基金(52105158)。
关键词 电子封装 纳米银 无压烧结 芯片级别 基板级别 electronic packaging nano-silver pressureless sintering chip-level substrate-level
  • 相关文献

参考文献12

二级参考文献67

  • 1纪丽娜,刘建生,杨振国.新型手机用PCB板焊点的失效分析[J].金属热处理,2007,32(z1):373-376. 被引量:1
  • 2李胜利,张邦强,凌子愚,杨国平,刘如伟.掺Ca铬酸镧超细粉体的成形与低温烧结特征[J].金属热处理,2005,30(9):6-9. 被引量:9
  • 3郝新慧,纪学军.微带线E类功率放大器的设计与实现[J].无线电通信技术,2007,33(3):39-41. 被引量:3
  • 4Cui Y,Lieber C M. Functional nanoscale electronic devices assembled using silicon nanowire building blocks[J].Science,2001.851-853.doi:10.1126/science.291.5505.851. 被引量:1
  • 5Zhong Z,Qian F,Wang D. Synthesis of P-type gallium nitride nanowires for electronic and photonic nanodevices[J].Nano Letters,2003,(03):343-346.doi:10.1021/nl034003w. 被引量:1
  • 6Mcalpine M C,Ahmad H,Wang D. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors[J].Nature Materials,2007,(05):379-384.doi:10.1038/nmat1891. 被引量:1
  • 7Hsu S Y,Lee M C,Lee K L. Extraction enhancement in organic light emitting devices by using metallic nanowire arrays[J].Applied Physics Letters,2008,(01):013303.doi:10.1063/1.2828712. 被引量:1
  • 8Jeong S J,Moon H S,Shin J. One-dimensional metal nanowire assembly via block copolymer soft graphoepitaxy[J].Nano Letters,2010,(09):3500-3505.doi:10.1021/nl101637f. 被引量:1
  • 9Li L,Yang Y W,Fang X S. Diameter-dependent electrical transport properties of bismuth nanowire arrays[J].Solid State Communications,2007,(09):492-496.doi:10.1016/j.ssc.2006.12.012. 被引量:1
  • 10Savu V,Neuser S,Villanueva G. Stenciled conducting bismuth nanowires[J].Journal of Vacuum Science and Thechbology B,2010,(01):169-172.doi:10.1016/j.ijcard.2008.11.111. 被引量:1

共引文献63

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部