摘要
大功率器件高占空比脉冲应用或连续波应用时,引发的高温会显著影响器件性能及可靠性。本文制备了基于金刚石/铝基复合热沉材料的GaN HEMT器件,采用红外测试方式试验分析了不同载片材料稳态、瞬态热特性及不同载片结构热性能。结果显示:与铜钼铜类复合材料相比,金刚石/铝高热导载片在高平均热耗下可显著降低器件结温,而在低占空比脉冲条件下应用高热导载片时器件降温效果不明显;金刚石复合材料载体存在一个最佳厚度使得器件的散热性能最佳。
The power GaN HEMT device produces a lot of heat in high duty cycle pulse and continuous wave applications,which can significantly affect the performance and reliability of the device.In this paper,GaN HEMT devices based on diamond-aluminum composite heat sink materials were prepared,and the steady-state and transient thermal properties of different slide materials and different slide structures were analyzed by infrared test.The results show that compared with copper-molybdenum-copper composites,diamond-aluminum composite material can significantly reduce the junction temperature of the device under high average thermal power.The cooling rate is different under different RF pulse conditions.A structural size is given which has optimal heat dissipation performance.
作者
施尚
王帅
季子路
戈硕
李宇超
SHI Shang;WANG Shuai;JI Zilu;GE Shuo Li Yuchao(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第6期543-546,共4页
Research & Progress of SSE
