摘要
GaN HEMT器件以其优良的性能被广泛应用于各种领域的电子设备中。由于其经常被用于高频、高温和高辐射的环境中,过高的环境应力会加速器件的损伤。当损伤达到一定程度时,就会引起器件失效,甚至导致整个系统失效。因此外加应力下GaN HEMT器件的寿命成为了当前研究的热点。基于不同机构对GaN HEMT器件的三温度直流测试结果,运用多元线性回归法和图估计法对GaN HEMT器件在正常使用温度下的寿命进行预测。预测结果表明,GaN HEMT器件在正常使用时,器件沟道温度为150℃的情况下,中位寿命长于10^(7)h;在累积失效概率达23%时,3.6 mm栅宽器件与1.25 mm栅宽器件的正常工作时间均为5.04×10^(5)h;当累积失效概率在23%以上时,1.25 mm栅宽器件的寿命明显较3.6 mm栅宽器件长。
GaN HEMT devices are widely used in electronic equipments in various fields for their excellent performance.Because they are often used in high-frequency,high-temperature and high-radiation environments,excessive environmental stress will accelerate the damage of the devices.When the damage reaches a certain level,it will cause the device to fail,and even lead to the failure of the entire system.Therefore,the lifetime of GaN HEMT devices under external stress has become a hot topic of current research.Based on the three-temperature DC tests of GaN HEMT devices by different institutions,multiple linear regression method and graph estimation methods are used to predict the lifetime of GaN HEMT devices at normal operating temperatures.The prediction results show that when the GaN HEMT device is in normal use and the channel temperature of the device is 150℃,the median lifetime is longer than 10^(7) hours,and when the cumulative failure probability reaches 23%,the normal working time of 3.6 mm gate width devices and 1.25 mm gate width devices are both 5.04×10^(5)hours.When the cumulative probability of failure is above 23%,the lifetime of 1.25 mm gate width devices is significantly longer than that of 3.6 mm gate width devices.
作者
王保柱
赵晋源
苏雪平
张明
杨琳
侯卫民
WANG Baozhu;ZHAO Jinyuan;SU Xueping;ZHANG Ming;YANG Lin;HOU Weimin(Institute of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang Hebei 050018,China)
出处
《电子器件》
CAS
北大核心
2022年第3期538-544,共7页
Chinese Journal of Electron Devices
基金
河北省自然科学基金项目(F2020208005)。
