摘要
基于体硅微电子机械系统(MEMS)工艺,采用系统级封装(SiP)技术,研制了一款覆盖C-Ka频段高密度集成的射频收发组件。组件集成了宽带功率放大器、宽带低噪声放大器、宽带I/Q混频器、宽带频率源等多个芯片。同层信号传输采用接地共面波导传输线,不同层间信号互联采用硅通孔形成的类同轴结构,实现了射频信号宽带低损耗传输;通过有源芯片硅基内微腔分离化设计和大量接地硅通孔,实现了射频信号间的隔离和屏蔽。实测结果表明:在6~30 GHz的频带内,SiP组件的发射功率≥36.2 dBm,发射增益≥34 dB;接收噪声系数≤2.4 dB,接收增益≥31 dB,体积仅为19.9 mm×19.9 mm×1.3 mm,实现了小型化和收/发/源一体化集成。
Based on the bulk silicon micro-electromechanical system(MEMS)process,a highdensity integrated RF transceiver module covering C-Ka band was developed by using system in pack⁃age(SiP)technology.This module integrated several chips such as broadband power amplifier,broadband low noise amplifier,broadband I/Q mixer,broadband frequency synthesizer.The coplanar waveguide ground transmission line was used for the signal transmission on the same layer,and the quasi-coaxially structure by through silicon via(TSV)was used for the interconnection of signals be⁃tween different layers,so as to realize the broadband and low-loss transmission of RF signals.Isola⁃tion and shielding of RF signals were achieved by microcavity-based active chip design and a large number of grounded TSV in silicon.The test results show that the transmitting power is above 36.2 dBm,the transmitting gain is above 34 dB in the 6-30 GHz operating band.The receiver noise figure is less than 2.4 dB,the receive gain is above 31 dB.The volume of the module is only 19.9 mm×19.9 mm×1.3 mm,which achieves miniaturization and integration of receiver/transmitter/source.
作者
陆宇
LU Yu(The 10th Research Institute of CETC,Chengdu,610036,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第6期480-485,共6页
Research & Progress of SSE
