摘要
当集成电路制造工艺缩小到14 nm及以下,阻挡层抛光清洗后表面缺陷严重影响芯片成品率。针对新型碱性阻挡层抛光液,与线上抛光液对比,通过检测抛光清洗后的晶圆表面缺陷,研究了不同阻挡层抛光液对CMP后清洗效果的影响。研究结果表明:当新型碱性阻挡层抛光液中不含盐酸胍时,抛光清洗后的晶圆表面存在大量划伤,盐酸胍的加入可同时提高TEOS和Cu的去除速率,且显著降低表面划伤数量;使用单一成分清洗液对不同阻挡层抛光液CMP后的晶圆清洗,新型阻挡层抛光液抛光清洗后的晶圆表面无任何污染颗粒,利于CMP后清洗,而线上抛光液的晶圆表面存在大量有机残留物和氧化物颗粒,需复配清洗液清洗;相比较线上阻挡层抛光液+复配清洗液工艺,使用新型碱性阻挡层抛光液+单一成分清洗液工艺产生的Cu/Ta界面腐蚀小,抛光清洗后的晶圆表面无明显的宽线条边缘缝隙和细线条表面塌陷的现象。
As integrated circuit manufacturing processes shrink to 14 nm and below,the surface defects after the barrier polishing and cleaning seriously affect the yield of the chip.In this paper,the novel alkaline barrier slurry was compared with the baseline slurry,and the influence of different barrier slurry on the post-CMP cleaning was studied by detecting the wafer surface defects after polishing and cleaning.The results show that when the novel alkaline barrier slurry contains no guanidine hydrochloride,there are a lot of scratches on the wafer surface after polishing and cleaning.At the same time,the removal rate of TEOS and Cu was improved by the addition of guanidine hydrochloride,and the number of surface scratches was significantly reduced.A single component cleaning solution was used to clean the wafer polished with the different barrier slurry.There is no surface contamination after cleaning with the novel barrier slurry,which is conducive to post-CMP cleaning.On the contrary,there are a lot of organic residues and oxide particles on the wafer surface polished with the baseline slurry,which need to be cleaned with the complex cleaning solution.Compared with the process of the baseline slurry+complex cleaning solution,the process of the novel alkaline barrier polishing slurry+single component cleaning solution produces less interface corrosion between Cu and Ta,and no obvious wide line edge gap and thin line surface collapse can be observed on the wafer surface after polishing and cleaning.
作者
栾晓东
张拓
戚克松
樊硕晨
贾儒
LUAN Xiaodong;ZHANG Tuo;QI Kesong;FAN Shuochen;JIA Ru(Department of Electronic Engineering,Jiangsu Ocean University,Lianyungang222005,Jiangsu Province,China;Jiangsu Institute of Marine Resources Development,Lianyungang222005,Jiangsu Province,China;School of Electronic and Information Engineering,Hebei University of Technology,Tianjin300130,China;Army University of Military Transportation University,Tianjin300130,China)
出处
《电子元件与材料》
CAS
北大核心
2023年第12期1483-1489,共7页
Electronic Components And Materials
基金
国家自然科学基金青年基金(62104087)
江苏省自然科学青年基金(BK20191005)
江苏高校“青蓝工程”资助。
关键词
阻挡层
化学机械抛光
清洗
缺陷
电偶腐蚀
barrier layer
chemical mechanical polishing
cleaning
defect
galvanic corrosion
