摘要
Ⅲ族氮化物半导体由于包含了宽的直接禁带宽度、高击穿场强、高电子饱和速度、高电子迁移率等优异的性质,自从发展以来便成为半导体领域中的一个热点.并且由于其禁带宽度可以从近紫外涵盖到红外区域,因此在传统半导体所难以实现的短波长光电子器件领域,也具有广阔的应用前景.原子层沉积由于其特殊的沉积机制可以在较低的温度下实现Ⅲ族氮化物半导体的高质量制备,通过调整原子层沉积的循环比也可以方便地调整合金材料中的成分.发展至今,原子层沉积已经成为制备Ⅲ族氮化物及其合金材料的一种重要方式.因此,本文着重介绍了近期使用原子层沉积进行Ⅲ族氮化物半导体及其合金的沉积及应用,包括使用不同前驱体、不同方式、不同类型原子层沉积,在不同温度、不同衬底上进行氮化物半导体及其合金的沉积.随后讨论了原子层沉积制备的Ⅲ族氮化物材料在不同器件中的应用.最后总结了原子层沉积在制备Ⅲ族氮化物半导体中的前景和挑战.
Group Ⅲ nitride semiconductors,such as GaN,AlN,and InN,are an important class of compound semiconductor material,and have attracted much attention,because of their unique physicochemical properties.These semiconductors possess excellent characteristics,such as wide direct bandgap,high breakdown field strength,high electron mobility,and good stability,and thus are called third-generation semiconductors.Their alloy materials can adjust their bandgaps by changing the type or proportion of group Ⅲ elements,covering a wide wavelength range from near-ultraviolet to infrared,thereby achieving wavelength selectivity in optoelectronic devices.Atomic layer deposition(ALD)is a unique technique that produces high-quality group Ⅲ nitride films at low temperatures.The ALD has become an important method of preparing group Ⅲ nitrides and their alloys.The alloy composition can be easily controlled by adjusting the ALD cycle ratio.This review highlights recent work on the growth and application of group Ⅲ nitride semiconductors and their alloys by using ALD.The work is summarized according to similarities so as to make it easier to understand the progress and focus of related research.Firstly,this review summarizes binary nitrides with a focus on their mechanism and application.In the section on mechanism investigation,the review categorizes and summarizes the effects of ALD precursor material,substrate,temperature,ALD type,and other conditions on film quality.This demonstrates the effects of different conditions on film growth behavior and quality.The section on application exploration primarily introduces the use of group Ⅲ nitride films in various devices through ALD,analyzes the enhancing effects of group Ⅲ nitrides on these devices,and explores the underlying mechanisms.Additionally,this section discusses the growth of group Ⅲ nitride alloys through ALD,summarizing different deposition methods and conditions.Regarding the ALD growth of group Ⅲ nitride semiconductors,there is more research on the ALD growth o
作者
仇鹏
刘恒
朱晓丽
田丰
杜梦超
邱洪宇
陈冠良
胡玉玉
孔德林
杨晋
卫会云
彭铭曾
郑新和
Qiu Peng;Liu Heng;Zhu Xiao-Li;Tian Feng;Du Meng-Chao;Qiu Hong-Yu;Chen Guan-Liang;Hu Yu-Yu;Kong De-Lin;Yang Jin;Wei Hui-Yun;Peng Ming-Zeng;Zheng Xin-He(School of Mathematics and Physics,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,University of Science and Technology Beijing,Beijing 100083,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2024年第3期50-71,共22页
Acta Physica Sinica
基金
国家重点研发计划(批准号:2018YFA0703700)
国家自然科学基金(批准号:52002021)
中央高校基本科研业务费(批准号:FRF-IDRY-GD22-001)资助的课题。
关键词
原子层沉积
氮化物半导体
薄膜生长
atomic layer deposition
nitride semiconductor
thin films growth
