摘要
为进一步阐明SOI器件中总剂量效应(TID)与单粒子效应(SEE)间的协和效应,本文基于SOI工艺特征尺寸为130 nm的国产7T结构SRAM进行了相关研究。通过对4组SOI SRAM开展了不同TID辐照后的SEE实验,得到器件单粒子翻转(SEU)截面随TID的变化规律。SOI SRAM的SEU截面在TID辐照后呈现明显的降低,最大在750 krad(Si)剂量辐照后下降80.5%。器件的饱和截面呈现随剂量增加而下降的趋势,最大下降19.5%,研究中未发现SEU阈值的明显变化。分析认为,延迟晶体管N5的等效关态电阻因为TID辐照而增加,该现象会造成N5的延迟作用增强,是该款器件SEU截面下降的主要原因。采用这种7T结构的SOI SRAM的抗SEE性能会随其在轨累积剂量的增加而逐渐增强,这为今后电子器件的抗辐射加固提供了启示。
The space environment is a very harsh operating environment,and space radiation can directly affect the operation of electronic devices causing total ionizing dose(TID),single event effect(SEE)and displacement damage(DD).For most devices TID and SEE are the two most dominant effects,the study of TID and SEE mechanism is one of the main tasks in modern spacecraft design.Previous studies show that there is a synergistic effect between TID and SEE.The TID will significantly affect the sensitivity of the SEE,and the effect rules and mechanisms are not consistent due to the different device process sizes and processes.There are few reports about the synergistic effect of SOI SRAM devices in the world,and the research on SOI SRAM with special memory cell structure has not been carried out.To further elucidate the synergistic effect between TID and SEE in SOI SRAM,an experimental study was conducted using a domestic 130 nm 7T SOI SRAM.The TID and SEE experiments were carried out at the China Institute of Atomic Energy TID test platform and HI-13 tandem accelerator SEE test platform.Before the SEE experiment,three groups of SOI SRAMs were irradiated by total dose of 300,500 and 750 krad,respectively,and finally the change of the single event upset(SEU)cross section of the SOI SRAM after different doses TID irradiation was obtained.The experimental result shows that the SEU cross section of the SOI SRAM decreases to 80.5%,66%and 50.5%at three LET values of 13.85,21.8,and 37.4 MeV·cm 2/mg after TID irradiation.There is no obvious difference found in the SEU cross section under different writing modes,which means that the synergistic effect of these devices has no data-dependent.The saturation cross section of the device also shows a trend of decreasing with increasing dose,up to 19.5%,and no significant change in the SEU threshold was found in this study.By analyzing the SEU cross section of flip-flop type 1→0 flip-flop and 0→1 flip-flop,it is found that the delay efficiency of the delay transistor N5 is the main reas
作者
肖舒颜
郭刚
王林飞
张峥
陈启明
高林春
王春林
张付强
赵树勇
刘建成
XIAO Shuyan;GUO Gang;WANG Linfei;ZHANG Zheng;CHEN Qiming;GAO Linchun;WANG Chunlin;ZHANG Fuqiang;ZHAO Shuyong;LIU Jiancheng(Department of Nuclear Physics,China Institute of Atomic Energy,Beijing 102413,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2024年第2期506-512,共7页
Atomic Energy Science and Technology
关键词
总剂量效应
单粒子效应
协和效应
单粒子翻转
静态随机存储器
total ionizing dose
single event effect
synergistic effect
single event upset
static random access memory
