摘要
针对起爆控制电路中的NMOS管在战场强磁干扰环境下时常发生误触、击穿等现象,通过Silvaco TCAD建立了金属场效应(MOS)晶体管在强电磁脉冲作用下的二维电热模型,获得了处于工作区的NMOS管在栅极注入电磁脉冲时的瞬态响应,分析了注入不同幅值的脉冲电压晶体管内电场强度、电流密度与管内温度的变化规律。结果表明:NMOS管在漏极注入脉冲电压超过阈值时,主要发生的是PN结反偏造成的雪崩击穿,雪崩击穿产生大量热能集中在PN结曲面处,管内发生电场强度、电流密度异常增大,进而发生热二次击穿导致NMOS管内出现局部熔融,造成永久性失效。而在脉冲幅值不变的情况下,雪崩击穿电压随栅极电压的增大而增大。
To address the electromagnetic sensitivity of detonation control circuits in battlefield environments,NMOS tubes,as vulnerable and sensitive devices,are often subjected to miscontacts,breakdowns and other phenomena.Through the Silvaco TCAD,a metal field effect(MOS)transistor in the strong electromagnetic pulse two-dimensional electro-thermal model is established,the transient response of NMOS tubes in the operating region when injecting electromagnetic pulse at the gate is obtained,the injection of different amplitudes of the pulse voltage transistor electric field strength,current density and the change rule of the temperature inside the tube are analyzed.The results show that:NMOS tube in the drain injection pulse voltage exceeds the threshold,the main occurrence of the PN junction reverse bias caused by avalanche breakdown,avalanche breakdown produces a large number of thermal energies concentrated in the PN junction surface,the tube occurs in the electric field strength,current density abnormally large,and then thermal secondary breakdown leads to the emergence of the local melting in the NMOS tube,resulting in permanent failure.In the case of constant pulse amplitude,the avalanche breakdown voltage increases with the gate voltage.
作者
李万银
张晨阳
查继鹏
郑国庆
李吾阳
张祥金
LI Wanyin;ZHANG Chenyang;ZHA Jipeng;ZHENG Guoqing;LI Wuyang;ZHANG Xiangjin(School of Mechanical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China)
出处
《兵器装备工程学报》
CAS
CSCD
北大核心
2023年第12期25-31,共7页
Journal of Ordnance Equipment Engineering
关键词
电磁脉冲
NMOS管
雪崩击穿
二次击穿
熔融烧毁
electromagnetic pulse
NMOS tube
avalanche breakdown
secondary breakdown
melt burnout
