摘要
提出了一种新型横向双侧栅结构的GaN JFET,并通过SILVACO软件对器件的沟道宽度、沟道电子浓度和p-GaN空穴浓度进行了优化,得到了阈值电压和输出电流与器件参数之间的变化规律,通过参数优化得到了增强型GaN JFET的结构参数条件。随后对设计的横向双侧栅结构增强型GaN JFET器件进行了击穿特性研究,发现当沟道长度短至0.5μm时,会出现严重的短沟道效应;当沟道长度大于1μm后,器件击穿电压由栅极与漏极间寄生PN结反向击穿决定,与沟道长度无关;采用RESURF(Reduced surface field)终端结构可以显著提升器件击穿电压,优化后的增强型GaN JFET器件击穿电压超过1200 V。此外,采用p型GaN缓冲层替代n型GaN缓冲层,能够有效提高器件的栅控能力。
In this paper,a lateral double-side-gate GaN JFET was proposed and the channel width and channel electron concentration as well as the hole concentration of p-GaN were optimized by using SILVACO.We studied the effect of device parameters on the threshold voltage and output current,and the device parameters for the realization of an enhancement-mode JFET were obtained.The breakdown characteristics of the proposed enhanced GaN JFET device were studied.It is found that severe short-channel effects will occur when the channel length is as short as 0.5μm;When the channel length is larger than 1μm,the breakdown voltage of the device is independent of the channel length but is determined by the reverse breakdown characteristics of the PN junction between the gate and drain.The breakdown voltage is significantly improved and exceeds 1200 V after the employment of a RESURF(Reduced surface field)terminal structure.In addition,when the n-type GaN buffer layer is replaced with a p-type GaN buffer layer,the gate control capability of the device can be effectively improved.
作者
喻晶
缪爱林
徐亮
朱鸿
陈敦军
YU Jing;MIAO Ailin;XU Liang;ZHU Hong;CHEN Dunjun(Zhongtian Broadband Technology Co.,Ltd.,Nantong,Jiangsu,226463,CHN;School of Electronic Science and Engineering,Nanjing University,Nanjing,210023,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2023年第5期375-380,共6页
Research & Progress of SSE
关键词
氮化镓
结型场效应晶体管
增强型
横向结构
击穿电压
gallium nitride(GaN)
junction field-effect transistor(JFET)
enhancement-mode
lateral structure
breakdown voltage
