摘要
针对弹舰载存储器在复杂环境下可能出现偶然掉电的问题,提出了一种具有断电续写功能的存储器解决方案,避免存储器在弹箭上偶发性掉电恢复之后上次存储的数据被新的数据覆盖。在边擦边写基础上实现了断电续写技术,且为了满足数据写入速率使用交叉双平面编程。通过地面测试台模拟弹上系统发送数据,大量测试结果表明,该设计实现了断电续写的功能,可以实现对数据的稳定存储,且验证了系统的可靠性。
Aiming at the problem of occasional power loss that may occur in the complex environment of the bomb shipboard memory,a memory solution with power failure rewrite function is proposed to avoid the last stored data being overwritten by the new data after the memory recovers from the occasional power loss on the bomb arrows.The power down-surviving technique is implemented on the basis of write-while-erase,and cross-biplane programming is used to satisfy the data writing rate.The ground test bench simulates the data sent from the bomb system,and after a large number of tests,the results show that the design achieves the function of power failure renewal,and can achieve the stable storage of data,which verifies the reliability of the system.
作者
文丰
郭红伟
李辉景
杨志文
Wen Feng;Guo Hongwei;Li Huijing;Yang Zhiwen(Science and Technology on Electronic Test and Measurement Laboratory,Key Laboratory of Instrumentation Science and Dynamic Measurement of Ministry of Education,North University of China,Taiyuan 030051,China)
出处
《单片机与嵌入式系统应用》
2023年第12期8-11,共4页
Microcontrollers & Embedded Systems
关键词
NAND
Flash
交叉双平面编程
边擦边写
坏块管理
断电续写
NAND Flash
interleaved dual page programming
write while erasing
bad block management
power down-surviving
