摘要
针对目前存储管理对大容量NAND Flash考虑的不足,在对大容量NAND Flash物理特性深入研究的基础上,实现了连续写与非连续写技术,提高了存储管理的效率。首先研究并实现了特有的状态信息描述方法,完全符合大容量MLC类型NAND Flash的物理特性,研究并实现了区域映射技术,适用于任何容量的闪存,并实现了连续写与非连续写技术,提高了写大文件的效率。实验结果表明,该方法在文件传输方面最大限度地挖掘了MLC类型NAND Flash的性能。
Aiming at the problems of the memory management for NAND flash with large capacity,continuous writing and discontinuous writing are implemented on the basis of large research on NAND flash.Firstly,a unique way of status description which satisfies to MLC NAND flash is researched and implemented.Then,zone map is researched and implemented,which makes the memory management suitable for any capacity of flash.Finally,continuous writing and discontinuous writing are researched and implemented,which improve the performance of writing.Experiments show that the proposed methods maximize the performance of MLC NAND flash in the way of file transmission.
出处
《计算机工程与设计》
CSCD
北大核心
2010年第3期511-513,554,共4页
Computer Engineering and Design
基金
国家创新研究群体科学基金项目(60821062)
关键词
闪存
存储管理
逻辑写
连续写
非连续写
flash
memory management
logical writing
continuous writing
discontinuous writing
