摘要
针对AlGaN(Aluminum Gallium Nitride)基深紫外LED(Light Emitting Diode)发光效率低、工作偏压较大的问题,设计了一种带有n^(+)-GaN/Al_(0.4)Ga_(0.6)N/p^(+)-GaN隧道结的氮极性AlGaN基深紫外LED器件结构。该结构由n-Al_(0.65)Ga_(0.35)N电子提供层、 Al_(0.65)Ga_(0.35)N/Al_(0.5)Ga_(0.5)N多量子阱、组分渐变p-Al_(x)Ga_(1-x)N和n^(+)-GaN/Al_(0.4)Ga_(0.6)N/p^(+)-GaN隧道结构成。研究结果表明,相比于无隧道结的参考LED,隧道结LED具有更高的内量子效率和光输出功率,同时其具有更低的开启电压。隧道结LED光电特性的改善,归因于隧道结的引入提升了LED的空穴注入效率,提高了LED器件的电流扩展能力。通过模拟软件对半导体器件载流子输运、光电特性的模拟,有助于加深对半导体器件物理特性的理解。若在“半导体器件物理”学习课程加入对半导体器件模拟软件的学习,能有效提升学生对半导体器件物理知识的理解和探索。
Aiming at the problems of low luminous efficiency and large working bias of AlGaN-based deep-UV(Ultraviolet) LEDs(Light Emitting Diodes),a nitrogen-polar AlGaN-based deep-UV LED device structure with n^(+)-GaN/Al_(0.4)Ga_(0.6)N/p^(+)-GaN tunnel junction is designed.The LED structure is consist of an electron supplying layer n-Al_(0.65)Ga_(0.35)N,a multiple quantum wells of Al_(0.65)Ga_(0.35)N/Al_(0.5)Ga_(0.5)N,a compositionally graded p-Al_xGa_(1-x)N,and a n^(+)-GaN/Al_(0.4)Ga_(0.6)N/p^(+)-GaN tunnel junction.The simulation results show that the tunnel junction LED has higher internal quantum efficiency and light output power,and it has a lower turn-on voltage than the reference LED without tunnel junction.The improvement of the optoelectronic characteristics of the tunnel junction LED is attributed to the introduction of the tunnel junction improving the hole injection efficiency of the LED,and improving the current spreading capability of the LED device.The results of this work show that the simulation of carrier transport and optoelectronic characteristics of semiconductor devices through simulation software is helpful deepening the understanding of the physical characteristics of semiconductor devices.If the study of semiconductor device simulation software is added to the learning process of “semiconductor device physics”,it will help the cultivation of talents in the semiconductor field.
作者
张源涛
邓高强
孙瑜
ZHANG Yuantao;DENG Gaoqiang;SUN Yu(College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)
出处
《吉林大学学报（信息科学版）》
CAS
2023年第5期767-772,共6页
Journal of Jilin University（Information Science Edition）
基金
国家自然科学基金资助项目(62104078,U22A20134,62074069)
国家重点研发计划基金资助项目(2021YFB3601000,2021YFB3601002,2022YFB3605205)
吉林大学研究生教育教学改革研究基金资助项目(2021JGZ32)
吉林大学本科教学改革研究基金资助项目(2021XYB112)
2023年度吉林省高等教育教学改革立项课题基金资助项目(JLJY202306574720)
吉林省科技发展计划基金资助项目(20200801013GH,20220201065GX)。
关键词
深紫外LED
隧道结
铝镓氮
氮化物半导体
deep ultraviolet light emitting diodes(LED)
tunnel junction
aluminum gallium nitride(AIGaN)
nitride semiconductor
