摘要
Solar-blind ultraviolet photodetectors(SBPDs)have attracted tremendous attention in the environmental,industrial,military,and biological fields.Aluminum gallium nitride(AlGaN),a kind of representative III-nitride semiconductor,has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility.Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate,employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer,thereby enhancing the SBPD performances.In recent years,a variety of remarkable breakthroughs have been achieved in the SBPDs.In this paper,the progress on photovoltaic AlGaN-based SBPDs is reviewed.First,the basic physical properties of AlGaN are introduced.Then,fabrication methods and defect annihilation of the AlN/sapphire template are discussed.Various photovoltaic SBPDs are further summarized,including Schottky barrier,metal-semiconductor-metal,p-n/p-i-n and avalanche photodiodes.Furthermore,surface modification and photoelectrochemical cell techniques are introduced.Benefitting from the development of fabrication techniques and optoelectronic devices,photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.
作者
Xu Liu
Shengjun Zhou
刘旭;周圣军(Center for Photonics and Semiconductors,School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China)
基金
supported by the National Natural Science Foundation of China(Nos.52075394 and 51675386)
the National Key Research and Development Program of China(No.2021YFB3600200)
the National Youth Talent Support Program.
