摘要
随着智能感知技术的快速发展,高功率、窄线宽的半导体激光光源成为研究热点。通过在边发射半导体激光器件表面引入高阶曲线光栅,设计了一种独特的非稳谐振腔结构,可实现高功率和窄线宽。采用紫外光刻和电感耦合等离子体(ICP)刻蚀技术,制备了周期为6.09μm、占空比为0.66、刻蚀深度为500 nm的曲线光栅。在室温条件下,测得腔长为2 mm的器件的阈值电流为220 mA,连续输出功率为1.48 W,斜率效率为0.63 W/A。比较了法布里‐珀罗激光器、直线光栅分布式反馈(DFB)激光器和曲线光栅DFB激光器的光谱,结果表明,曲线光栅对半导体激光器的模式选择起到了关键作用,有利于实现高功率DFB激光器的窄线宽单模输出。该器件具有制作工艺相对简单、性能优异、可靠性高等特点,具有广阔的应用前景。
Objective Semiconductor lasers with compact structure,long life,high electro-optical conversion efficiency,and direct modulation are ideal for many traditional applications.The rapid development of intelligent sensing technology and the replacement of core devices have resulted in higher performance requirements of narrower spectral linewidth and higher output power for such lasers.The typical solution for realizing narrow-linewidth semiconductor lasers is the implementation of buried gratings.However,the necessary secondary epitaxial growth in the fabrication is difficult and time-consuming;it also leads to increased fabrication cycle time and cost of the device.The use of surface gratings in the devices has been proposed to address this issue.Prior studies indicate that distributed feedback(DFB)lasers based on surface gratings exhibit excellent operating characteristics[e.g.,high power,narrow linewidth,large side-mode suppression ratio(SMSR),and small temperature drift.In general,increasing the ridge width is a relatively straightforward method of increasing the output power of the device.However,for wide-ridge DFB lasers,additional high-order transverse mode suppression mechanisms must be introduced to ensure single-mode high-power operation of the device.An unstable cavity laser is the combination of unstable resonator and wide stripe semiconductor laser,which renders the device as exhibiting high lateral mode selectivity.Consequently,it can provide good linewidth in broad area lasers.However,the structures of unstable cavity semiconductor lasers are diverse and complex,with most using electron beam lithography,holographic lithography,multi-step etching,secondary epitaxy,and other processes.This results in high manufacturing costs and difficulties;thus,its practical implementation and engineering are challenging.The structural design and characteristic optimization of novel unstable cavity laser are vital and of practical significance for the performance improvement and application expansion of semiconductor
作者
唐慧
李瑞冬
邹永刚
田锟
郭誉钧
范杰
Tang Hui;Li Ruidong;Zou Yonggang;Tian Kun;Guo Yujun;Fan Jie(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,Jinlin,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2023年第19期13-20,共8页
Chinese Journal of Lasers
基金
吉林省科技发展计划项目(20190302052GX,20210201030GX)。
关键词
激光器
半导体激光器
曲线光栅
高阶光栅
高功率
窄线宽
lasers
semiconductor laser
curved gratings
high-order gratings
high power
narrow linewidth
