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100 keV质子辐照InGaAs单结太阳电池性能退化机理研究 被引量:1

STUDY ON DEGRADATION MECHANISM OF 100 keV PROTON IRRADIATED InGaAs SINGLE JUNCTION SOLAR CELLS
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摘要 为研究太阳电池光电参数由低能质子辐照产生的辐射损伤机制,对In_(0.53)Ga_(0.47)As单结太阳电池开展100 keV质子辐照及退火试验研究,分析太阳电池电参数和光谱响应在辐照及退火前后的变化规律,结合SRIM仿真计算结果对辐照引起的位移损伤进行讨论。结果表明,当质子辐照累积注量为5×10^(12)p/cm^(2)时,In_(0.53)Ga_(0.47)As单结太阳电池的短路电流、开路电压和最大输出功率分别衰减到其初始值的88.8%、88.3%、72.3%;太阳电池光谱响应在短波区的衰减比长波区更严重。SRIM仿真结果表明,上述结果是由于100 keV的质子能量沉积在In_(0.53)Ga_(0.47)As单结太阳电池发射区和基区顶部而产生位移损伤缺陷导致的。对辐照后的太阳电池样品进行150℃退火处理,太阳电池电学参数因辐射感生缺陷的湮灭而产生了不同程度的恢复。 In order to study the radiation damage mechanism of solar cell photoelectric parameters caused by low-energy proton irradiation,100 keV proton irradiation and annealing experiments were carried out for In_(0.53)Ga_(0.47)As single junction cells.The variation laws of solar cell electrical parameters and spectral response before and after irradiation and annealing were analyzed.Based on the SRIM simulation results,the displacement damage caused by irradiation was discussed.The results shows that when the proton irradiation cumulative fluence up to 5×10^(12)p/cm^(2),the short-circuit current,open circuit voltage and maximum output power of In_(0.53)Ga_(0.47)As cell degraded to 88.8%,88.3%and 72.3%respectively;The attenuation of solar cell spectral response in short wave region is more serious than that in long wave region.SRIM simulation results shows that these are caused by displacement damage defects due to the deposition of 100 keV proton energy on the emission region and top of the base region of In_(0.53)Ga_(0.47)As cell.The irradiated samples were annealed at 150℃,and the electrical parameters of samples were restored due to the annihilation of radiation-induced defects.
作者 玛丽娅·黑尼 陈馨芸 雷琪琪 艾尔肯·阿不都瓦衣提 李豫东 郭旗 He Chengfa Maliya·Heini;Chen Xinyun;Lei Qiqi;Aierken·Abuduwayiti;Li Yudong;Guo Qi;He Chengfa(Xinjiang Key Laboratory of Electronic Information Materials and Devices,Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry of Chinese Academy of Sciences,Urumqi 830011,China;School of Energy and Environment Science,Yunnan Normal University,Kunming 650500,China)
出处 《太阳能学报》 EI CAS CSCD 北大核心 2023年第5期146-151,共6页 Acta Energiae Solaris Sinica
基金 新疆电子信息材料与器件重点实验室资助项目(2021D04012) 国家自然科学基金(61534008)。
关键词 太阳电池效率 质子辐照 辐射损伤 量子效率 solar cells proton irradiation radiation damage quantum efficiency
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  • 1王履芳,陈庭金.太阳电池减反射膜的最佳光学匹配[J].太阳能学报,1989,10(1):110-117. 被引量:5
  • 2Ewa Radziemska. Dark I-U-T measurements of single crystalline silicon solar cells [ J ]. Energy Conversion and Management, 2005, 46: 1485-1494. 被引量:1
  • 3Aranjo G L, Sanchez Enrique. A new method for experimental determination of the series resistance of a solar cell [J]. IEEE Transactions on Electron Devices, 1982, 29 (10) : 1511-1513. 被引量:1
  • 4Jia Quanxi, Anderson W A, Liu Enke. A novel approach for evaluating the series resistance of solar cells [ J ]. Solar Cells, 1988, 25(3) : 311-318. 被引量:1
  • 5Wolf M, Rauschenbusch H. Series resistance effects on solar cell measurements [ J ]. Advanced Energy Conversion, 1963, (3) : 455-479. 被引量:1
  • 6Aberle A, Wenham S R, Green M A. A new method for accurate measurement of the lumped series resistance of solar cells[ A]. 23rd IEEE Photovoltaic Specialists Conference[C], Louisville, 1993, 133-139. 被引量:1
  • 7Kunz O, Inns D, Sproul A B, et al. Application of Suns- Voc and Jsc-Suns measurements to the characterization of mesa-type thin-film solar ceils [ A ]. Proceedings of the 21 st European Photovoltaic Solar Energy Conference [ C ], Dresden, Germany, 2006, 374-377. 被引量:1
  • 8Mette A, Pysch D. Series resistance characterization of industrial silicon solar cells with screen-printed contacts using Hotmelt paste [ J ]. Progress in Photovoltaics: Research and Applications, 2007, 15 (6) : 493-505. 被引量:1
  • 9Pyscha D, Mettea A, Glunza S W. A review and comparison of different methods to determine the series resistance of solar ceils [J]. Solar Energy Materials & Solar Cells, 2007, 91(18): 1698-1706. 被引量:1
  • 10Shravan Kumar Chunduri. Putting cells to the test [ J ]. Photon International, 2010, (10) : 170-203. 被引量:1

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