摘要
锑化铟的电极因三维特性易产生侧壁断裂问题,互联的铟柱会侵入电极内部,影响锑化铟芯片的可靠性。使用离子束溅射沉积、热蒸发、磁控溅射等方法制备三维电极体系,并通过聚焦离子束(Focused Ion Beam, FIB)方法以及扫描电子显微镜(Scanning Electron Microscope, SEM)对其进行表征。结果表明,通过热蒸发、磁控溅射制备的电极三维覆盖情况较好,但存在电极脱落和剥离困难的问题;离子束溅射沉积方法可通过改变沉积角度、移除修正挡板来实现锑化铟三维电极的高质量制备。
The indium antimonide(InSb)electrode is prone to sidewall fracture due to its three-dimensional characteristics.Interconnected indium bumps will invade the inside of the electrode,affecting the reliability of the InSb chip.Three-dimensional electrode systems were prepared by ion beam sputtering deposition,thermal evaporation and magnetron sputtering.It was characterized by the focused ion beam(FIB)method and scanning electron microscope(SEM).The results show that the electrodes prepared by thermal evaporation and magnetron sputtering have good three-dimensional coverage,but there are problems with electrodes falling off and difficulty in peeling off.The ion beam sputtering deposition method can achieve high-quality preparation of three-dimensional InSb electrodes by changing the deposition angle and removing the correction baffle.
作者
张泽群
龚志红
李忠贺
李乾
宁提
杨刚
ZHANG Ze-qun;GONG Zhi-hong;LI Zhong-he;LI Qian;NING Ti;YANG Gang(North China Research Institute of Electro-Optics,Beijing 100015,China;Unit 93160 of PLA,Beijing 100071,China)
出处
《红外》
CAS
2023年第6期7-11,共5页
Infrared
关键词
锑化铟
三维电极体系
热蒸发
磁控溅射
离子束溅射沉积
InSb
three-dimensional electrode system
thermal evaporation
magnetron sputtering
ion beam sputtering deposition
