摘要
二维超宽禁带半导体材料六方氮化硼(h-BN)具有绝缘性好、击穿场强高、热导率高,以及良好的稳定性等特点,且其原子级平整表面极少有悬挂键和电荷陷阱的存在,使其有潜力成为二维电子器件的衬底和栅介质材料。实现h-BN应用的关键在于生长高质量的h-BN单晶薄膜,本文详细介绍了在过渡金属衬底、绝缘介质衬底和半导体材料表面外延生长h-BN的方法及其研究进展。在具有催化活性的过渡金属衬底(铜、镍、铁、铂等)上可以外延得到高质量的二维h-BN,而在绝缘介质或半导体材料衬底上直接生长h-BN单晶薄膜更具挑战性。蓝宝石以其良好的热稳定性和化学稳定性成为外延h-BN的首选衬底,蓝宝石衬底上生长h-BN薄膜的方法主要有化学气相沉积、分子束外延、离子束溅射沉积、金属有机气相外延,以及高温后退火等,通过这些方法可以在蓝宝石衬底上外延得到h-BN单晶薄膜,还可以集成到现有的一些III-V族化合物半导体的外延生长工艺之中,为h-BN的大面积应用奠定基础。此外,石墨烯、硅和锗等半导体材料衬底上生长h-BN单晶薄膜也是当前研究的一个热点,这为基于h-BN的异质结制备及其应用提供了新的方向。
As an ultrawide band gap semiconductor,two-dimensional(2D)hexagonal boron nitride(h-BN)has attracted considerable research interest because of its unique properties such as excellent electrical insulation,high breakdown field,high thermal conductivity,and good chemical inertness,which make it a promising candidate as dielectric and substrate layers for devices based on other 2D materials.The synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable for these applications.In this review,the methods and progress of the epitaxial growth of 2D h-BN on transition metal,h-BN films on dielectric and semiconductor substrates are described in detail.The high-quality 2D h-BN layers can be epitaxially grown on the transition metal substrates with catalytic activity including Cu,Ni,Fe,Pt,etc.However,it is a great challenge to directly grow h-BN single crystal films on insulating dielectric or semiconductor substrates.Sapphire is a preferred substrate for the growth of h-BN for its good thermal stability and chemical stability.The growth of h-BN thin films on sapphire substrate has been widely reported by various techniques,such as chemical vapor deposition,molecular beam epitaxy,ion beam sputtering deposition,metal-organic vapor phase epitaxy,high-temperature post-annealing and so on.Based on these techniques,high-quality 2D h-BN has been prepared on sapphire substrates,it can also be integrated into the epitaxial growth processes of some existing III-V compound semiconductors,laying the foundation for the large-scale application of h-BN.In addition,the growth of h-BN single crystal films have also been attempted on semiconductor substrates like graphene,silicon and germanium,which provide an attractive strategy for the fabrication and application of h-BN-based heterojunctions.
作者
王高凯
张兴旺
WANG Gaokai;ZHANG Xingwang(Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《人工晶体学报》
CAS
北大核心
2023年第5期825-841,共17页
Journal of Synthetic Crystals
基金
国家自然科学基金(61874106)
中国科学院战略性先导科技专项(XDB43000000)。
关键词
六方氮化硼
外延生长
薄膜
二维材料
宽禁带半导体
hexagonal boron nitride
epitaxial growth
thin film
two-dimensional material
wide band gap semiconductor
