摘要
Gallium nitride(GaN)has widespread applications in the semiconductor industry because of its desirable optoelectronic properties.The fabrication of surface structures on GaN thin films can effectively modify their optical and electrical properties,providing additional degrees of freedom for controlling GaN-based devices.Compared with lithography-based techniques,laser processing is maskless and much more efficient.This paper shows how surface micronano structures can be produced on GaN thin films using 355 nm nanosecond laser irradiation.The effects of the laser pulse energy,number of pulses,and polarization direction were studied.It was found that distinct micro-nano structures were formed under different irradiation conditions,and their geometries and elemental compositions were analyzed.The results indicate that different types of surface micro-nano structures can be produced on GaN thin films in a controllable manner using 355 nm nanosecond laser irradiation.The results of our study provide valuable guidance for the surface modification of GaN-based optoelectronic devices.
出处
《激光与光电子学进展》
CSCD
北大核心
2023年第7期196-202,共7页
Laser & Optoelectronics Progress
