摘要
针对高能领域对磷锗锌(ZGP)晶体表面粗糙度达到亚纳米级的要求,提出一套完整的ZGP晶体加工工艺。首先用内圆切割机将ZGP晶体切成7 mm×7 mm×15 mm的长方体;然后根据对比实验,选取最佳磨粒(金刚石)粒径为5μm,用机械研磨的方法使晶体的表面粗糙度(Sa)降至150 nm左右;随后基于化学机械抛光(CMP)技术,设计了粗抛光(采用3μm的金刚石悬浮液作为抛光液)和精抛光(SiO_(2)体系)两道工序,通过单因素实验确定了最佳抛光时间均为1 h,并通过正交试验得到如下优化的精抛光工艺:SiO_(2)粒径0.05μm,SiO_(2)质量分数8%,H_(2)O_(2)质量分数3%,pH=9,抛光压力17.24 kPa,抛光转速13.5 r/min,抛光液流量300 mL/min。最终得到表面粗糙度为0.106 nm的超光滑ZGP晶体。
A complete processing technology for ZnGeP_(2) (ZGP) crystals was developed to meet the requirement of subnanoscale surface roughness for them in high energy applications. Firstly, the semi-finished ZGP crystal is cut into a cuboid of size 7 mm × 7 mm × 15 mm using an inner circle cutter. Secondly, the ZGP crystal was mechanically lapped with diamonds preferentially 5 μm in size which was selected based on the comparison experiments to reduce its surface roughness (Sa) to about 150 nm rapidly. Thirdly, based on the chemical mechanical polishing (CMP) technique, a “rough” CMP step in an aqueous suspension of diamonds with a size of 3 μm and a “fine” CMP step in a SiO_(2) slurry were adopted. The result of single-factor experiment showed that the best duration for both the “rough” and “fine” CMP steps should be one hour. The slurry composition and operation conditions of the “fine” CMP step was optimized by orthogonal test as follows: SiO_(2) (particle size 0.05 μm) 4wt%, H_(2)O_(2 )3wt%, pH = 8, polishing pressure 17.24 kPa, rotation speed 13.5 r/min, and slurry flow rate 300 mL/min. Finally, super-smooth ZGP crystals with a surface roughness of 0.106 μm could be obtained.
作者
聂清清
付思源
梅斌
孙守利
阳红
NIE Qingqing;FU Siyuan;MEI Bin;SUN Shouli;YANG Hong(Institute of Machinery Manufacturing Technology,China Academy of Engineering Physics,Mianyang 621900,China)
出处
《电镀与涂饰》
CAS
北大核心
2023年第7期63-73,共11页
Electroplating & Finishing
关键词
磷锗锌晶体
切割
研磨
化学机械抛光
表面粗糙度
正交优化
zinc germanium phosphide crystal
cutting
mechanical lapping
chemical mechanical polishing
surface roughness
orthogonal optimization
