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磷锗锌(ZnGeP_2)单晶体生长研究 被引量:3

Studies on the Growth of ZnGeP_2 Single Crystals
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摘要 以高纯(6N)Ge、Zn、P单质为原料,按化学计量比并富P 0.1%~0.3%配料,在特殊设计的密封安瓿中,采用改进的两温区气相输运法(MTVM)和机械振荡技术合成出单相致密的ZnGeP2多晶原料。以此为原料,采用改进的垂直布里奇曼法(VBM)生长出尺寸为Φ15 mm×25 mm的ZnGeP2单晶体,呈黑灰色,外观完整、无裂纹。对晶体进行解理试验发现,其存在(112)和(101)两个易解理面;对10×10×2 mm3ZnGeP2晶片,采用同成分粉末包裹,在550~600℃真空退火后,经红外透过率测试结果显示:在2~12μm波段内红外透过率可达55%以上。 Single-phase ZnGeP2 polycrystals were synthesized by modified two-zone vapor-transporting method(MTVM) and mechanic oscillations technique,directly from high pure(6N) Zn,Ge,and red P elements according to the ZnGeP2 stoichiometry and 0.1%~0.3% P-rich.The synthesis reaction was carried in a special quartz ampoule.With the presynthesized polycrystals,the integral and gray-black ZnGeP2 single crystals with size of Φ15 mm×25 mm were obtained by modified Vertical Bridgman Method(VBM).As-grown crystals were chara...
出处 《四川大学学报(工程科学版)》 EI CAS CSCD 北大核心 2008年第6期101-104,共4页 Journal of Sichuan University (Engineering Science Edition)
基金 国家自然科学基金资助项目(5067206150732005)
关键词 磷锗锌 单晶生长 垂直布里奇曼法 X射线衍射 红外透过率 ZnGeP2 single crystal growth VBM X-ray diffraction infrared transmission
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共引文献31

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  • 1程江,朱世富,赵北君,赵欣,陈宝军,何知宇,杨慧光,孙永强,张羽.通过退火研究ZnGeP_2晶体中点缺陷与红外透过率的关系[J].半导体技术,2008,33(S1):372-375. 被引量:2
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