摘要
针对一款商用磁阻式随机存取存储器(magnetoresistive random access memory, MRAM)芯片,进行了静态总剂量和动态总剂量电离辐射效应研究。利用中国计量科学研究院的60Co γ辐射源对商用MRAM进行了不同测试向量、不同测试模式、有无保护层、加电模式及不加电模式下的总剂量效应试验研究。结果表明静态辐照下芯片的抗总剂量能力最差,其次为动态读模式、动态写模式,不加电模式下芯片的抗总剂量能力最强,这一结果说明磁存储单元具有很强的抗总剂量能力。针对不同测试向量(00,FF,斜三角),研究结果表明:静态模式下,抗辐射能力FF<斜三角<00;动态读模式下,抗辐射能力FF<00<斜三角。与无屏蔽层电路相比,有屏蔽层电路的抗总剂量能力提高了23倍。本文对不同测试模式下芯片出现的数据位错误类型进行了统计,并对出现的原因进行了分析说明,这一结果可为宇航用MRAM芯片的加固设计提供指导和参考。
The ionizing radiation effects of static total dose and dynamic total dose on a commercial magnetoresistive random access memory(MRAM)are studied.The total dose test study of commercial MRAM is conducted at the 60 Coγradiation source of China National Institute of Metrology,including different test vectors,different test modes,whether there is a protective layer or not,and the total dose test study under power-on and power-off modes.The results show that the anti total dose capability of the chip under static mode is the worst,followed by dynamic read mode and dynamic write mode,and the no power mode is the best which shows that the magnetic storage unit has a strong anti irradiation capability.For different test vectors,the following conclusions are drawn:in static mode,the radiation resistance FF<oblique triangle<00 while in the dynamic read mode,the radiation resistance FF<00<oblique triangle.The anti total dose effect of the circuit with shielding layer is 23 times higher than that of the circuit without shielding layer.The data bit errors of the chip under different test modes are analyzed and explained,and the test results provide guidance and reference for the reinforcement design of aerospace MRAM chips.
作者
于春青
李同德
王亮
郑宏超
毕潇
王亚坤
YU Chunqing;LI Tongde;WANG Liang;ZHENG Hongchao;BI Xiao;WANG Yakun(Beijing Microelectronics Technology Institute,Laboratory of Science and Technology on Radiation-Hardened Integrated Circuits,CASC,Beijing 100076,China)
出处
《现代应用物理》
2023年第1期173-179,共7页
Modern Applied Physics
基金
国家自然科学基金资助项目(11690045,61674015)。
